Nonequilibrium phonon dynamics and electron distribution functions in InP and InAs

E. D. Grann, Kong-Thon Tsen, D. K. Ferry

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

We have used subpicosecond laser pulses to study the generation of nonequilibrium LO phonons in both InP and InAs. These two semiconductors provide a contrast in that the decaying of the Raman signal probes different relaxation mechanisms. In InP, for example, we find that the decay of the Raman signal is dominated by the lifetime of the LO phonons. On the contrary, in InAs, our studies show that the decay of the Raman signal is governed by the time required for electrons to return to the Γ valley from the L valleys of the conduction bands. In addition, nonequilibrium electron distributions were also studied in InP and InAs. We have found that the single-particle-scattering spectrum in InAs can only be observed with the use of a much longer laser pulse width than subpicosecond as a result of electron intervalley scattering and very small electron effective mass.

Original languageEnglish (US)
Pages (from-to)9847-9851
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume53
Issue number15
StatePublished - Apr 15 1996

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electron distribution
Distribution functions
distribution functions
Phonons
valleys
Electrons
Laser pulses
phonons
Electron scattering
decay
Conduction bands
lasers
conduction bands
electron scattering
pulse duration
electrons
Scattering
Semiconductor materials
life (durability)
probes

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Nonequilibrium phonon dynamics and electron distribution functions in InP and InAs. / Grann, E. D.; Tsen, Kong-Thon; Ferry, D. K.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 53, No. 15, 15.04.1996, p. 9847-9851.

Research output: Contribution to journalArticle

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