Nondestructive thickness determination of high-k dielectric HfO 2 and interfacial oxide by spectroscopic ellipsometry

Guanghua Song, Xiaolong Yang, Meng Tao, Jianyu Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nondestructive thickness determination of 2-layer ultrathin dielectric stacks was investigated with spectroscopic ellipsometry. The high-k dielectric HfO 2 film (∼40Å) was formed by e-beam evaporation followed by thermal oxidation at different temperatures. The interfacial layer, assumed to be SiO 2, was inevitably formed in this process. The ellipsometric ψ and Δ data for the 4-layer structure, air/HfO 2/SiO 2/Si, were accurately calculated and fitted to the experimental data acquired at incident angles 70° and 75° with the thickness of each dielectric layer as fitting parameters. The effect of optical constant on the fitted thickness was also taken into account. The ellipsometric thickness was examined with subsequent TEM, and the agreement between TEM and ellipsometry was excellent with an error of less than 10%. The ellipsometric thickness was also consistent with the thickness from C-V measurements.

Original languageEnglish (US)
Title of host publicationCHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005 - International Conference
Pages177-181
Number of pages5
DOIs
StatePublished - Sep 9 2005
Externally publishedYes
Event2005 International Conference on Characterization and Metrology for ULSI Technology - Richardson, TX, United States
Duration: Mar 15 2005Mar 18 2005

Publication series

NameAIP Conference Proceedings
Volume788
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other2005 International Conference on Characterization and Metrology for ULSI Technology
CountryUnited States
CityRichardson, TX
Period3/15/053/18/05

Keywords

  • Ellipsometry
  • High-k dielectric
  • Nondestructive characterization

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Song, G., Yang, X., Tao, M., & Huang, J. (2005). Nondestructive thickness determination of high-k dielectric HfO 2 and interfacial oxide by spectroscopic ellipsometry. In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005 - International Conference (pp. 177-181). (AIP Conference Proceedings; Vol. 788). https://doi.org/10.1063/1.2062959