Non-volatile memory based on solid electrolytes

Michael Kozicki, Chakravarthy Gopalan, Murali Balakrishnan, Mira Park, Maria Mitkova

Research output: Chapter in Book/Report/Conference proceedingConference contribution

103 Scopus citations

Abstract

Programmable Metallization Cell (PMC) memory utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte. A silver or copper layer and an inert electrode formed in contact with a Ag +- or Cu2+-containing electrolyte film creates a device in which information is stored using large non-volatile resistance change caused by the reduction of the metal ions. Key attributes are low voltage, low current, rapid write and erase, good retention and endurance, and the ability for the storage cells to be physically scaled to a few tens of nm. This paper describes the principle of operation of PMC devices and presents representative results from cells with diameters ranging from micron scale to nanoscale dimensions based on Ag-Ge-Se, Ag-Ge-S, and Cu-WO3 solid electrolytes.

Original languageEnglish (US)
Title of host publicationProceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004
Pages10-17
Number of pages8
StatePublished - Dec 1 2004
EventProceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004 - Orlando, FL, United States
Duration: Nov 15 2004Nov 17 2004

Publication series

NameProceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004

Other

OtherProceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004
CountryUnited States
CityOrlando, FL
Period11/15/0411/17/04

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Keywords

  • Electrodeposition
  • Non-volatile memory
  • Resistance change
  • Solid electrolyte

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kozicki, M., Gopalan, C., Balakrishnan, M., Park, M., & Mitkova, M. (2004). Non-volatile memory based on solid electrolytes. In Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004 (pp. 10-17). (Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004).