TY - GEN
T1 - Non-volatile memory based on solid electrolytes
AU - Kozicki, Michael
AU - Gopalan, Chakravarthy
AU - Balakrishnan, Murali
AU - Park, Mira
AU - Mitkova, Maria
PY - 2004/12/1
Y1 - 2004/12/1
N2 - Programmable Metallization Cell (PMC) memory utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte. A silver or copper layer and an inert electrode formed in contact with a Ag +- or Cu2+-containing electrolyte film creates a device in which information is stored using large non-volatile resistance change caused by the reduction of the metal ions. Key attributes are low voltage, low current, rapid write and erase, good retention and endurance, and the ability for the storage cells to be physically scaled to a few tens of nm. This paper describes the principle of operation of PMC devices and presents representative results from cells with diameters ranging from micron scale to nanoscale dimensions based on Ag-Ge-Se, Ag-Ge-S, and Cu-WO3 solid electrolytes.
AB - Programmable Metallization Cell (PMC) memory utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte. A silver or copper layer and an inert electrode formed in contact with a Ag +- or Cu2+-containing electrolyte film creates a device in which information is stored using large non-volatile resistance change caused by the reduction of the metal ions. Key attributes are low voltage, low current, rapid write and erase, good retention and endurance, and the ability for the storage cells to be physically scaled to a few tens of nm. This paper describes the principle of operation of PMC devices and presents representative results from cells with diameters ranging from micron scale to nanoscale dimensions based on Ag-Ge-Se, Ag-Ge-S, and Cu-WO3 solid electrolytes.
KW - Electrodeposition
KW - Non-volatile memory
KW - Resistance change
KW - Solid electrolyte
UR - http://www.scopus.com/inward/record.url?scp=18844382348&partnerID=8YFLogxK
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M3 - Conference contribution
AN - SCOPUS:18844382348
SN - 0780387260
T3 - Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004
SP - 10
EP - 17
BT - Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004
T2 - Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004
Y2 - 15 November 2004 through 17 November 2004
ER -