Non-Linear Coupling Effects in Fully Depleted SOI Transistors

Matthew Spear; Hugh J. Barnaby; Trace Wallace; Jose Solano; Oliver Forman; Donald Wilson; Ivan Sanchez Esqueda; Aymeric Privat; Marek Turowski; Rudolph Vonniederhausern; Matthew J. Marinella

doi:10.1109/TNS.2023.3252439

Non-Linear Coupling Effects in Fully Depleted SOI Transistors

Matthew Spear, Hugh J. Barnaby, Trace Wallace, Jose Solano, Oliver Forman, Donald Wilson, Ivan Sanchez Esqueda, Aymeric Privat, Marek Turowski, Rudolph Vonniederhausern, Matthew J. Marinella

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Experimental results show the response of 22 nm fully depleted silicon on insulator (FDSOI) transistors to 10 keV x-rays. The extracted coupling factor between the front- and back-gates of the device shows a divergence from the traditionally assumed coupling factor exhibiting a non-linear dependence on total ionizing dose (TID). A depletion region in the well under the buried oxide is included in the model of the device. The coupling factor is rederived using the new model following the previous derivation. The new coupling factor has a dependence on TID received by the device. Verification of the new model is performed with comparisons to the experimental data and technology computer-aided design (TCAD) simulations. The new model fits well to data and simulations.

Original language	English (US)
Pages (from-to)	434-441
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	70
Issue number	4
DOIs	https://doi.org/10.1109/TNS.2023.3252439
State	Published - Apr 1 2023

Keywords

Coupling factor
fully depleted silicon on insulator (FDSOI)
technology computer-aided design (TCAD)
total ionizing dose (TID)

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2023.3252439

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title = "Non-Linear Coupling Effects in Fully Depleted SOI Transistors",

abstract = "Experimental results show the response of 22 nm fully depleted silicon on insulator (FDSOI) transistors to 10 keV x-rays. The extracted coupling factor between the front- and back-gates of the device shows a divergence from the traditionally assumed coupling factor exhibiting a non-linear dependence on total ionizing dose (TID). A depletion region in the well under the buried oxide is included in the model of the device. The coupling factor is rederived using the new model following the previous derivation. The new coupling factor has a dependence on TID received by the device. Verification of the new model is performed with comparisons to the experimental data and technology computer-aided design (TCAD) simulations. The new model fits well to data and simulations.",

keywords = "Coupling factor, fully depleted silicon on insulator (FDSOI), technology computer-aided design (TCAD), total ionizing dose (TID)",

author = "Matthew Spear and Barnaby, {Hugh J.} and Trace Wallace and Jose Solano and Oliver Forman and Donald Wilson and Esqueda, {Ivan Sanchez} and Aymeric Privat and Marek Turowski and Rudolph Vonniederhausern and Marinella, {Matthew J.}",

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AU - Barnaby, Hugh J.

AU - Wallace, Trace

AU - Solano, Jose

AU - Forman, Oliver

AU - Wilson, Donald

AU - Esqueda, Ivan Sanchez

AU - Privat, Aymeric

AU - Turowski, Marek

AU - Vonniederhausern, Rudolph

AU - Marinella, Matthew J.

PY - 2023/4/1

Y1 - 2023/4/1

N2 - Experimental results show the response of 22 nm fully depleted silicon on insulator (FDSOI) transistors to 10 keV x-rays. The extracted coupling factor between the front- and back-gates of the device shows a divergence from the traditionally assumed coupling factor exhibiting a non-linear dependence on total ionizing dose (TID). A depletion region in the well under the buried oxide is included in the model of the device. The coupling factor is rederived using the new model following the previous derivation. The new coupling factor has a dependence on TID received by the device. Verification of the new model is performed with comparisons to the experimental data and technology computer-aided design (TCAD) simulations. The new model fits well to data and simulations.

AB - Experimental results show the response of 22 nm fully depleted silicon on insulator (FDSOI) transistors to 10 keV x-rays. The extracted coupling factor between the front- and back-gates of the device shows a divergence from the traditionally assumed coupling factor exhibiting a non-linear dependence on total ionizing dose (TID). A depletion region in the well under the buried oxide is included in the model of the device. The coupling factor is rederived using the new model following the previous derivation. The new coupling factor has a dependence on TID received by the device. Verification of the new model is performed with comparisons to the experimental data and technology computer-aided design (TCAD) simulations. The new model fits well to data and simulations.

KW - Coupling factor

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KW - technology computer-aided design (TCAD)

KW - total ionizing dose (TID)

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Non-Linear Coupling Effects in Fully Depleted SOI Transistors

Abstract

Keywords

ASJC Scopus subject areas

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