Non-Linear Coupling Effects in Fully Depleted SOI Transistors

Matthew Spear; Hugh J. Barnaby; Trace Wallace; Jose Solano; Oliver Forman; Donald Wilson; Ivan Sanchez Esqueda; Aymeric Privat; Marek Turowski; Rudolph Vonniederhausern; Matthew J. Marinella

doi:10.1109/TNS.2023.3252439

Non-Linear Coupling Effects in Fully Depleted SOI Transistors

Matthew Spear, Hugh J. Barnaby, Trace Wallace, Jose Solano, Oliver Forman, Donald Wilson, Ivan Sanchez Esqueda, Aymeric Privat, Marek Turowski, Rudolph Vonniederhausern, Matthew J. Marinella

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Contribution to journal › Article › peer-review

Abstract

Experimental results show the response of 22 nm fully depleted silicon on insulator (FDSOI) transistors to 10 keV x-rays. The extracted coupling factor between the front- and back-gates of the device shows a divergence from the traditionally assumed coupling factor exhibiting a non-linear dependence on total ionizing dose (TID). A depletion region in the well under the buried oxide is included in the model of the device. The coupling factor is rederived using the new model following the previous derivation. The new coupling factor has a dependence on TID received by the device. Verification of the new model is performed with comparisons to the experimental data and technology computer-aided design (TCAD) simulations. The new model fits well to data and simulations.

Original language	English (US)
Pages (from-to)	434-441
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	70
Issue number	4
DOIs	https://doi.org/10.1109/TNS.2023.3252439
State	Published - Apr 1 2023

Keywords

Coupling factor
fully depleted silicon on insulator (FDSOI)
technology computer-aided design (TCAD)
total ionizing dose (TID)

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TNS.2023.3252439

Cite this

@article{27f38dd47cd744749747293583949da3,

title = "Non-Linear Coupling Effects in Fully Depleted SOI Transistors",

abstract = "Experimental results show the response of 22 nm fully depleted silicon on insulator (FDSOI) transistors to 10 keV x-rays. The extracted coupling factor between the front- and back-gates of the device shows a divergence from the traditionally assumed coupling factor exhibiting a non-linear dependence on total ionizing dose (TID). A depletion region in the well under the buried oxide is included in the model of the device. The coupling factor is rederived using the new model following the previous derivation. The new coupling factor has a dependence on TID received by the device. Verification of the new model is performed with comparisons to the experimental data and technology computer-aided design (TCAD) simulations. The new model fits well to data and simulations.",

keywords = "Coupling factor, fully depleted silicon on insulator (FDSOI), technology computer-aided design (TCAD), total ionizing dose (TID)",

author = "Matthew Spear and Barnaby, {Hugh J.} and Trace Wallace and Jose Solano and Oliver Forman and Donald Wilson and Esqueda, {Ivan Sanchez} and Aymeric Privat and Marek Turowski and Rudolph Vonniederhausern and Marinella, {Matthew J.}",

note = "Funding Information: This work was supported in part by the Navy Strategic and Spectrum Missions Advanced Resilient Trusted Systems (S2MARTS) Program under Project S2MARTS 19-03 and in part by the Jet Propulsion Laboratory under Subcontract 1651948 and Subcontract 1671929. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2023",

month = apr,

day = "1",

doi = "10.1109/TNS.2023.3252439",

language = "English (US)",

volume = "70",

pages = "434--441",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Non-Linear Coupling Effects in Fully Depleted SOI Transistors

AU - Spear, Matthew

AU - Barnaby, Hugh J.

AU - Wallace, Trace

AU - Solano, Jose

AU - Forman, Oliver

AU - Wilson, Donald

AU - Esqueda, Ivan Sanchez

AU - Privat, Aymeric

AU - Turowski, Marek

AU - Vonniederhausern, Rudolph

AU - Marinella, Matthew J.

N1 - Funding Information: This work was supported in part by the Navy Strategic and Spectrum Missions Advanced Resilient Trusted Systems (S2MARTS) Program under Project S2MARTS 19-03 and in part by the Jet Propulsion Laboratory under Subcontract 1651948 and Subcontract 1671929. Publisher Copyright: © 1963-2012 IEEE.

PY - 2023/4/1

Y1 - 2023/4/1

N2 - Experimental results show the response of 22 nm fully depleted silicon on insulator (FDSOI) transistors to 10 keV x-rays. The extracted coupling factor between the front- and back-gates of the device shows a divergence from the traditionally assumed coupling factor exhibiting a non-linear dependence on total ionizing dose (TID). A depletion region in the well under the buried oxide is included in the model of the device. The coupling factor is rederived using the new model following the previous derivation. The new coupling factor has a dependence on TID received by the device. Verification of the new model is performed with comparisons to the experimental data and technology computer-aided design (TCAD) simulations. The new model fits well to data and simulations.

AB - Experimental results show the response of 22 nm fully depleted silicon on insulator (FDSOI) transistors to 10 keV x-rays. The extracted coupling factor between the front- and back-gates of the device shows a divergence from the traditionally assumed coupling factor exhibiting a non-linear dependence on total ionizing dose (TID). A depletion region in the well under the buried oxide is included in the model of the device. The coupling factor is rederived using the new model following the previous derivation. The new coupling factor has a dependence on TID received by the device. Verification of the new model is performed with comparisons to the experimental data and technology computer-aided design (TCAD) simulations. The new model fits well to data and simulations.

KW - Coupling factor

KW - fully depleted silicon on insulator (FDSOI)

KW - technology computer-aided design (TCAD)

KW - total ionizing dose (TID)

UR - http://www.scopus.com/inward/record.url?scp=85149382001&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85149382001&partnerID=8YFLogxK

U2 - 10.1109/TNS.2023.3252439

DO - 10.1109/TNS.2023.3252439

M3 - Article

AN - SCOPUS:85149382001

SN - 0018-9499

VL - 70

SP - 434

EP - 441

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 4

ER -

Non-Linear Coupling Effects in Fully Depleted SOI Transistors

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this