Non-linear behaviors of dark current slope in p+n GaAs solar cells following proton irradiations

Xiao Jie Chen, Hugh Barnaby, Jeffery H. Warner, Scott R. Messenger, Robert J. Walters, Steven A. Ringel, Jeongho Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

In this paper, the dark current responses of p+n GaAs solar cells are measured before and after 2MeV proton irradiations. The responses indicate that the dark current slope is not only a function of applied forward bias, but changes with proton fluence. The change in the dark current slope behavior can be modeled by Shockley-Reed-Hall (SRH) recombination statistics as a buildup of bulk traps in the space charge region having energies away from the mid-gap level. The model also suggess that the energy of proton-induced bulk traps is a signature of radiation type but not the particle fluence.

Original languageEnglish (US)
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages1565-1570
Number of pages6
DOIs
StatePublished - Dec 1 2009
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: Jun 7 2009Jun 12 2009

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
CountryUnited States
CityPhiladelphia, PA
Period6/7/096/12/09

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ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Chen, X. J., Barnaby, H., Warner, J. H., Messenger, S. R., Walters, R. J., Ringel, S. A., & Park, J. (2009). Non-linear behaviors of dark current slope in p+n GaAs solar cells following proton irradiations. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 1565-1570). [5411369] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411369