Non-Lambertian Reflective Back Scattering and Its Impact on Device Performance of Ultrathin GaAs Single-Junction Solar Cells

Shi Liu, Weiquan Yang, Jacob Becker, Ying Shen Kuo, Yong Hang Zhang

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

This paper studies non-Lambertian scattering and its impacts on the optical properties and device performance of the ultrathin GaAs single-junction solar cell with a reflective back scattering layer. The Phong distribution is used to quantify the scattering effectiveness of the textured back surface, as well as its impacts on device absorptance, emittance, photon extraction and recycling factor, short-circuit current density (Jsc), external quantum efficiency (EQE), and power conversion efficiency. Both a general GaAs cell design and the ultrathin cell design are carefully investigated. A Phong exponent m of ∼12 is determined by fitting both simulated (Jsc) and EQE to their experimental values, with a more accurate averaged reflectivity of the textured Al0.52In0.48P/Au interface taken into account. Additionally, the measured open-circuit voltage (Voc) is lower than the best achievable value due to the nonradiative recombination in the device, and a limited lifetime of ∼130 ns is determined by fitting the simulated and measured Voc; a specific series resistivity of 1.2 Ω·cm2 is determined to account for the 77.8% fill factor.

Original languageEnglish (US)
Pages (from-to)832-839
Number of pages8
JournalIEEE Journal of Photovoltaics
Volume5
Issue number3
DOIs
StatePublished - May 1 2015

Keywords

  • Gallium arsenide
  • photovoltaic cell
  • surface textures
  • thin-film devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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