Non-equilibrium electron distributions and energy loss rate In xGa 1-xAs 1-yN y studied by picosecond Raman spectroscopy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Non-equilibrium electron distributions and energy loss rate in a MOCVD-grown In xGa 1-xAs 1-yN y (x =0.03 and y =0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n ≅ 10 18 cm -3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate In xGa 1-xAs 1-yN y is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsH. Jiang, K.T. Tsen, J. Song
Pages96-108
Number of pages13
Volume4280
DOIs
StatePublished - 2001
EventUltrafast Phenomena in Semiconductors V - San Jose, CA, United States
Duration: Jan 25 2001Jan 26 2001

Other

OtherUltrafast Phenomena in Semiconductors V
CountryUnited States
CitySan Jose, CA
Period1/25/011/26/01

Keywords

  • InGaAsN
  • Raman spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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    Chen, Y., & Tsen, K-T. (2001). Non-equilibrium electron distributions and energy loss rate In xGa 1-xAs 1-yN y studied by picosecond Raman spectroscopy In H. Jiang, K. T. Tsen, & J. Song (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4280, pp. 96-108) https://doi.org/10.1117/12.424724