Non-equilibrium electron distributions and energy loss rate In
            xGa
            1-xAs
            1-yN
            y studied by picosecond Raman spectroscopy

Y. Chen; Kong-Thon Tsen

doi:10.1117/12.424724

Non-equilibrium electron distributions and energy loss rate In _xGa _1-xAs _1-yN _y studied by picosecond Raman spectroscopy

Y. Chen, Kong-Thon Tsen

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Non-equilibrium electron distributions and energy loss rate in a MOCVD-grown In _xGa _1-xAs _1-yN _y (x =0.03 and y =0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n ≅ 10 ¹⁸ cm ^-3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate In _xGa _1-xAs _1-yN _y is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	H. Jiang, K.T. Tsen, J. Song
Pages	96-108
Number of pages	13
Volume	4280
DOIs	https://doi.org/10.1117/12.424724
State	Published - 2001
Event	Ultrafast Phenomena in Semiconductors V - San Jose, CA, United States Duration: Jan 25 2001 → Jan 26 2001

Other

Other	Ultrafast Phenomena in Semiconductors V
Country/Territory	United States
City	San Jose, CA
Period	1/25/01 → 1/26/01

Keywords

InGaAsN
Raman spectroscopy

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Access to Document

10.1117/12.424724

Cite this

Chen, Y., & Tsen, K.-T. (2001). Non-equilibrium electron distributions and energy loss rate In _xGa _1-xAs _1-yN _y studied by picosecond Raman spectroscopy In H. Jiang, K. T. Tsen, & J. Song (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4280, pp. 96-108) https://doi.org/10.1117/12.424724

Non-equilibrium electron distributions and energy loss rate In _xGa _1-xAs _1-yN _y studied by picosecond Raman spectroscopy . / Chen, Y.; Tsen, Kong-Thon.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / H. Jiang; K.T. Tsen; J. Song. Vol. 4280 2001. p. 96-108.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, Y & Tsen, K-T 2001, Non-equilibrium electron distributions and energy loss rate In _xGa _1-xAs _1-yN _y studied by picosecond Raman spectroscopy in H Jiang, KT Tsen & J Song (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 4280, pp. 96-108, Ultrafast Phenomena in Semiconductors V, San Jose, CA, United States, 1/25/01. https://doi.org/10.1117/12.424724

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abstract = "Non-equilibrium electron distributions and energy loss rate in a MOCVD-grown In xGa 1-xAs 1-yN y (x =0.03 and y =0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n ≅ 10 18 cm -3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate In xGa 1-xAs 1-yN y is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs. ",

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N2 - Non-equilibrium electron distributions and energy loss rate in a MOCVD-grown In xGa 1-xAs 1-yN y (x =0.03 and y =0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n ≅ 10 18 cm -3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate In xGa 1-xAs 1-yN y is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.

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