Non-equilibrium electron distributions and energy loss rate In xGa 1-xAs 1-yN y studied by picosecond Raman spectroscopy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Non-equilibrium electron distributions and energy loss rate in a MOCVD-grown In xGa 1-xAs 1-yN y (x =0.03 and y =0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n ≅ 10 18 cm -3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate In xGa 1-xAs 1-yN y is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsH. Jiang, K.T. Tsen, J. Song
Pages96-108
Number of pages13
Volume4280
DOIs
StatePublished - 2001
EventUltrafast Phenomena in Semiconductors V - San Jose, CA, United States
Duration: Jan 25 2001Jan 26 2001

Other

OtherUltrafast Phenomena in Semiconductors V
CountryUnited States
CitySan Jose, CA
Period1/25/011/26/01

Fingerprint

Electron temperature
electron distribution
Raman spectroscopy
Energy dissipation
energy dissipation
electron energy
Laser excitation
Electrons
Epilayers
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Carrier concentration
Laser pulses
pulse duration
Substrates
excitation
lasers
Temperature
temperature

Keywords

  • InGaAsN
  • Raman spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Chen, Y., & Tsen, K-T. (2001). Non-equilibrium electron distributions and energy loss rate In xGa 1-xAs 1-yN y studied by picosecond Raman spectroscopy In H. Jiang, K. T. Tsen, & J. Song (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4280, pp. 96-108) https://doi.org/10.1117/12.424724

Non-equilibrium electron distributions and energy loss rate In xGa 1-xAs 1-yN y studied by picosecond Raman spectroscopy . / Chen, Y.; Tsen, Kong-Thon.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / H. Jiang; K.T. Tsen; J. Song. Vol. 4280 2001. p. 96-108.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, Y & Tsen, K-T 2001, Non-equilibrium electron distributions and energy loss rate In xGa 1-xAs 1-yN y studied by picosecond Raman spectroscopy in H Jiang, KT Tsen & J Song (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 4280, pp. 96-108, Ultrafast Phenomena in Semiconductors V, San Jose, CA, United States, 1/25/01. https://doi.org/10.1117/12.424724
Chen Y, Tsen K-T. Non-equilibrium electron distributions and energy loss rate In xGa 1-xAs 1-yN y studied by picosecond Raman spectroscopy In Jiang H, Tsen KT, Song J, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4280. 2001. p. 96-108 https://doi.org/10.1117/12.424724
Chen, Y. ; Tsen, Kong-Thon. / Non-equilibrium electron distributions and energy loss rate In xGa 1-xAs 1-yN y studied by picosecond Raman spectroscopy Proceedings of SPIE - The International Society for Optical Engineering. editor / H. Jiang ; K.T. Tsen ; J. Song. Vol. 4280 2001. pp. 96-108
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