Abstract
Non-equilibrium electron distributions and electron-longitudinal optical phonon scattering rates in wurtzite GaN have been studied by subpicosecond time-resolved Raman spectroscopy. Our experimental results show that for electron densities n ≥ 5 × 1017cm-3, the non-equilibrium electron distributions in wurtzite GaN can be very well described by Fermi-Dirac distribution functions with the effective electron temperature much higher than the lattice temperature. In addition, we find that the total electron-longitudinal optical phonon scattering rate in GaN is about one order of magnitude larger than that in GaAs. We attribute this enormous increase in the electron-longitudinal optical phonon scattering rate to the much larger ionicity in GaN.
Original language | English (US) |
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Pages (from-to) | 171-174 |
Number of pages | 4 |
Journal | Journal of Electronic Materials |
Volume | 27 |
Issue number | 4 |
DOIs | |
State | Published - Apr 1998 |
Keywords
- GaN
- Phonon
- Raman
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry