Non-equilibrium carrier transport in a high-quality InN film grown on GaN

L. W. Liang; Kong-Thon Tsen; C. Poweleit; D. K. Ferry; Shaw Wei D Tsen; Hai Lu; William J. Schaff

doi:10.1002/pssc.200461319

Non-equilibrium carrier transport in a high-quality InN film grown on GaN

L. W. Liang, Kong-Thon Tsen, C. Poweleit, D. K. Ferry, Shaw Wei D Tsen, Hai Lu, William J. Schaff

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Picosecond Raman spectroscopy has been used to interogate non-equilibrium electron transport in a high quality, single-crystal wurtzite structure InN thin film grown on GaN. The experimental results demonstrate that electron drift velocity as high as (5.0±0.5)x10 ⁷ cm/sec can be achieved at room temperature. The experimental results have been compared with ensemble Monte Carlo simulations and good agreement is obtained. From the comparison, we have also deduced that the built-in electric field intensity inside our InN film system is about 75 kV/cm.

Original language	English (US)
Title of host publication	Physica Status Solidi C: Conferences
Pages	2297-2300
Number of pages	4
Volume	2
Edition	7
DOIs	https://doi.org/10.1002/pssc.200461319
State	Published - 2005

ASJC Scopus subject areas

Condensed Matter Physics

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title = "Non-equilibrium carrier transport in a high-quality InN film grown on GaN",

abstract = "Picosecond Raman spectroscopy has been used to interogate non-equilibrium electron transport in a high quality, single-crystal wurtzite structure InN thin film grown on GaN. The experimental results demonstrate that electron drift velocity as high as (5.0±0.5)x10 7 cm/sec can be achieved at room temperature. The experimental results have been compared with ensemble Monte Carlo simulations and good agreement is obtained. From the comparison, we have also deduced that the built-in electric field intensity inside our InN film system is about 75 kV/cm.",

author = "Liang, {L. W.} and Kong-Thon Tsen and C. Poweleit and Ferry, {D. K.} and Tsen, {Shaw Wei D} and Hai Lu and Schaff, {William J.}",

year = "2005",

doi = "10.1002/pssc.200461319",

language = "English (US)",

volume = "2",

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T1 - Non-equilibrium carrier transport in a high-quality InN film grown on GaN

AU - Liang, L. W.

AU - Tsen, Kong-Thon

AU - Poweleit, C.

AU - Ferry, D. K.

AU - Tsen, Shaw Wei D

AU - Lu, Hai

AU - Schaff, William J.

PY - 2005

Y1 - 2005

N2 - Picosecond Raman spectroscopy has been used to interogate non-equilibrium electron transport in a high quality, single-crystal wurtzite structure InN thin film grown on GaN. The experimental results demonstrate that electron drift velocity as high as (5.0±0.5)x10 7 cm/sec can be achieved at room temperature. The experimental results have been compared with ensemble Monte Carlo simulations and good agreement is obtained. From the comparison, we have also deduced that the built-in electric field intensity inside our InN film system is about 75 kV/cm.

AB - Picosecond Raman spectroscopy has been used to interogate non-equilibrium electron transport in a high quality, single-crystal wurtzite structure InN thin film grown on GaN. The experimental results demonstrate that electron drift velocity as high as (5.0±0.5)x10 7 cm/sec can be achieved at room temperature. The experimental results have been compared with ensemble Monte Carlo simulations and good agreement is obtained. From the comparison, we have also deduced that the built-in electric field intensity inside our InN film system is about 75 kV/cm.

UR - http://www.scopus.com/inward/record.url?scp=27344459129&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27344459129&partnerID=8YFLogxK

U2 - 10.1002/pssc.200461319

DO - 10.1002/pssc.200461319

M3 - Conference contribution

AN - SCOPUS:27344459129

VL - 2

SP - 2297

EP - 2300

BT - Physica Status Solidi C: Conferences

ER -

Non-equilibrium carrier transport in a high-quality InN film grown on GaN

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