Non-equilibrium carrier transport in a high-quality InN film grown on GaN

L. W. Liang, Kong-Thon Tsen, C. Poweleit, D. K. Ferry, Shaw Wei D Tsen, Hai Lu, William J. Schaff

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Picosecond Raman spectroscopy has been used to interogate non-equilibrium electron transport in a high quality, single-crystal wurtzite structure InN thin film grown on GaN. The experimental results demonstrate that electron drift velocity as high as (5.0±0.5)x10 7 cm/sec can be achieved at room temperature. The experimental results have been compared with ensemble Monte Carlo simulations and good agreement is obtained. From the comparison, we have also deduced that the built-in electric field intensity inside our InN film system is about 75 kV/cm.

Original languageEnglish (US)
Title of host publicationPhysica Status Solidi C: Conferences
Pages2297-2300
Number of pages4
Volume2
Edition7
DOIs
Publication statusPublished - 2005

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Liang, L. W., Tsen, K-T., Poweleit, C., Ferry, D. K., Tsen, S. W. D., Lu, H., & Schaff, W. J. (2005). Non-equilibrium carrier transport in a high-quality InN film grown on GaN. In Physica Status Solidi C: Conferences (7 ed., Vol. 2, pp. 2297-2300) https://doi.org/10.1002/pssc.200461319