Non-contact device and integrated circuit characterization in the G-Band (140-220 GHz)

Cosan Caglayan, Georgios Trichopoulos, Kubilay Sertel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We demonstrate, for the first time, on-wafer 2-port characterization of passive millimeter wave components using a novel, non-contact measurement probe technique in the G-band (140-220 GHz). This new non-contact approach enables fast, repeatable, low-cost, wear&tear-free, robust, and large-scale evaluation of integrated circuits (IC) and devices. On-wafer calibration standards are used to accurately factor out for the repeatable errors in the non-contact probe setup. Owing to its quasi-optical nature, this novel method is readily scalable for a broad frequency range from mmW to THz (60 GHz-3 THz) bands.

Original languageEnglish (US)
Title of host publication2014 IEEE Antennas and Propagation Society International Symposium(APSURSI)
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages295-296
Number of pages2
ISBN (Print)9781479935406
DOIs
StatePublished - Sep 18 2014
Externally publishedYes
Event2014 IEEE Antennas and Propagation Society International Symposium, APSURSI 2014 - Memphis, United States
Duration: Jul 6 2014Jul 11 2014

Other

Other2014 IEEE Antennas and Propagation Society International Symposium, APSURSI 2014
CountryUnited States
CityMemphis
Period7/6/147/11/14

Fingerprint

Integrated circuits
Millimeter waves
Wear of materials
Calibration
Costs

Keywords

  • millimeter waves
  • on-wafer measurements
  • sub-millimeter waves
  • terahertz

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Caglayan, C., Trichopoulos, G., & Sertel, K. (2014). Non-contact device and integrated circuit characterization in the G-Band (140-220 GHz). In 2014 IEEE Antennas and Propagation Society International Symposium(APSURSI) (pp. 295-296). [6904479] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APS.2014.6904479

Non-contact device and integrated circuit characterization in the G-Band (140-220 GHz). / Caglayan, Cosan; Trichopoulos, Georgios; Sertel, Kubilay.

2014 IEEE Antennas and Propagation Society International Symposium(APSURSI). Institute of Electrical and Electronics Engineers Inc., 2014. p. 295-296 6904479.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Caglayan, C, Trichopoulos, G & Sertel, K 2014, Non-contact device and integrated circuit characterization in the G-Band (140-220 GHz). in 2014 IEEE Antennas and Propagation Society International Symposium(APSURSI)., 6904479, Institute of Electrical and Electronics Engineers Inc., pp. 295-296, 2014 IEEE Antennas and Propagation Society International Symposium, APSURSI 2014, Memphis, United States, 7/6/14. https://doi.org/10.1109/APS.2014.6904479
Caglayan C, Trichopoulos G, Sertel K. Non-contact device and integrated circuit characterization in the G-Band (140-220 GHz). In 2014 IEEE Antennas and Propagation Society International Symposium(APSURSI). Institute of Electrical and Electronics Engineers Inc. 2014. p. 295-296. 6904479 https://doi.org/10.1109/APS.2014.6904479
Caglayan, Cosan ; Trichopoulos, Georgios ; Sertel, Kubilay. / Non-contact device and integrated circuit characterization in the G-Band (140-220 GHz). 2014 IEEE Antennas and Propagation Society International Symposium(APSURSI). Institute of Electrical and Electronics Engineers Inc., 2014. pp. 295-296
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