Non-contact device and integrated circuit characterization in the G-Band (140-220 GHz)

Cosan Caglayan, Georgios C. Trichopoulos, Kubilay Sertel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We demonstrate, for the first time, on-wafer 2-port characterization of passive millimeter wave components using a novel, non-contact measurement probe technique in the G-band (140-220 GHz). This new non-contact approach enables fast, repeatable, low-cost, wear&tear-free, robust, and large-scale evaluation of integrated circuits (IC) and devices. On-wafer calibration standards are used to accurately factor out for the repeatable errors in the non-contact probe setup. Owing to its quasi-optical nature, this novel method is readily scalable for a broad frequency range from mmW to THz (60 GHz-3 THz) bands.

Original languageEnglish (US)
Title of host publication2014 IEEE Antennas and Propagation Society International Symposium(APSURSI)
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages295-296
Number of pages2
ISBN (Electronic)9781479935406
DOIs
StatePublished - Sep 18 2014
Externally publishedYes
Event2014 IEEE Antennas and Propagation Society International Symposium, APSURSI 2014 - Memphis, United States
Duration: Jul 6 2014Jul 11 2014

Publication series

NameIEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
ISSN (Print)1522-3965

Other

Other2014 IEEE Antennas and Propagation Society International Symposium, APSURSI 2014
Country/TerritoryUnited States
CityMemphis
Period7/6/147/11/14

Keywords

  • millimeter waves
  • on-wafer measurements
  • sub-millimeter waves
  • terahertz

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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