Non-charge-sheet analytic model for ideal retrograde doping MOSFETs

Jin He, Zhize Zhou, Yu Cao, Lin He, Yun Ye, Mansun Chan

Research output: Contribution to journalArticle

Abstract

This paper presents a physics-based non-charge-sheet analytic model for an ideal retrograde doping MOSFET structure. The model adopts an approach of solving Poisson's equation to the heavilydoped region and lightly-doped region, respectively, and ultimately obtains the analytic expression of potential distribution and the drain current of the retrograde doping MOSFET. This paper compares the analytical model with numerical simulation results, which demonstrates that the current analytic model is applicable to both the weak and strong inversion situations and also to different geometry conditions. In this case, this model provides a foundation to develop a complete retrograde doping MOSFET model involved with advanced physical effects, such as short-channel effect, quantum mechanic effect.

Original languageEnglish (US)
Pages (from-to)232-239
Number of pages8
JournalJournal of Computational and Theoretical Nanoscience
Volume10
Issue number1
DOIs
StatePublished - Jan 2013
Externally publishedYes

Fingerprint

MOSFET
field effect transistors
Doping (additives)
Model
Quantum theory
Drain current
Poisson equation
Poisson's equation
Analytical Model
Quantum Mechanics
Analytical models
Inversion
Physics
quantum mechanics
Numerical Simulation
Geometry
inversions
Computer simulation
physics
Demonstrate

Keywords

  • Compact modeling
  • Integrated circuit
  • MOSFET device
  • Short-channel effect

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Computational Mathematics
  • Chemistry(all)

Cite this

Non-charge-sheet analytic model for ideal retrograde doping MOSFETs. / He, Jin; Zhou, Zhize; Cao, Yu; He, Lin; Ye, Yun; Chan, Mansun.

In: Journal of Computational and Theoretical Nanoscience, Vol. 10, No. 1, 01.2013, p. 232-239.

Research output: Contribution to journalArticle

He, Jin ; Zhou, Zhize ; Cao, Yu ; He, Lin ; Ye, Yun ; Chan, Mansun. / Non-charge-sheet analytic model for ideal retrograde doping MOSFETs. In: Journal of Computational and Theoretical Nanoscience. 2013 ; Vol. 10, No. 1. pp. 232-239.
@article{9ca5c3e85d80489f993661be36225413,
title = "Non-charge-sheet analytic model for ideal retrograde doping MOSFETs",
abstract = "This paper presents a physics-based non-charge-sheet analytic model for an ideal retrograde doping MOSFET structure. The model adopts an approach of solving Poisson's equation to the heavilydoped region and lightly-doped region, respectively, and ultimately obtains the analytic expression of potential distribution and the drain current of the retrograde doping MOSFET. This paper compares the analytical model with numerical simulation results, which demonstrates that the current analytic model is applicable to both the weak and strong inversion situations and also to different geometry conditions. In this case, this model provides a foundation to develop a complete retrograde doping MOSFET model involved with advanced physical effects, such as short-channel effect, quantum mechanic effect.",
keywords = "Compact modeling, Integrated circuit, MOSFET device, Short-channel effect",
author = "Jin He and Zhize Zhou and Yu Cao and Lin He and Yun Ye and Mansun Chan",
year = "2013",
month = "1",
doi = "10.1166/jctn.2013.2684",
language = "English (US)",
volume = "10",
pages = "232--239",
journal = "Journal of Computational and Theoretical Nanoscience",
issn = "1546-1955",
publisher = "American Scientific Publishers",
number = "1",

}

TY - JOUR

T1 - Non-charge-sheet analytic model for ideal retrograde doping MOSFETs

AU - He, Jin

AU - Zhou, Zhize

AU - Cao, Yu

AU - He, Lin

AU - Ye, Yun

AU - Chan, Mansun

PY - 2013/1

Y1 - 2013/1

N2 - This paper presents a physics-based non-charge-sheet analytic model for an ideal retrograde doping MOSFET structure. The model adopts an approach of solving Poisson's equation to the heavilydoped region and lightly-doped region, respectively, and ultimately obtains the analytic expression of potential distribution and the drain current of the retrograde doping MOSFET. This paper compares the analytical model with numerical simulation results, which demonstrates that the current analytic model is applicable to both the weak and strong inversion situations and also to different geometry conditions. In this case, this model provides a foundation to develop a complete retrograde doping MOSFET model involved with advanced physical effects, such as short-channel effect, quantum mechanic effect.

AB - This paper presents a physics-based non-charge-sheet analytic model for an ideal retrograde doping MOSFET structure. The model adopts an approach of solving Poisson's equation to the heavilydoped region and lightly-doped region, respectively, and ultimately obtains the analytic expression of potential distribution and the drain current of the retrograde doping MOSFET. This paper compares the analytical model with numerical simulation results, which demonstrates that the current analytic model is applicable to both the weak and strong inversion situations and also to different geometry conditions. In this case, this model provides a foundation to develop a complete retrograde doping MOSFET model involved with advanced physical effects, such as short-channel effect, quantum mechanic effect.

KW - Compact modeling

KW - Integrated circuit

KW - MOSFET device

KW - Short-channel effect

UR - http://www.scopus.com/inward/record.url?scp=84876574798&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876574798&partnerID=8YFLogxK

U2 - 10.1166/jctn.2013.2684

DO - 10.1166/jctn.2013.2684

M3 - Article

VL - 10

SP - 232

EP - 239

JO - Journal of Computational and Theoretical Nanoscience

JF - Journal of Computational and Theoretical Nanoscience

SN - 1546-1955

IS - 1

ER -