Nitrogen activated bowing parameter of GaAs1-xNx (x ≤ 1%) obtained from photoreflectance spectra

Arif Khan; Nicole Nelson; James A. Griffin; David Smith; Todd Steiner; S. Noor Mohammad

doi:10.1016/S0038-1101(03)00298-3

Nitrogen activated bowing parameter of GaAs_1-xN_x (x ≤ 1%) obtained from photoreflectance spectra

Arif Khan, Nicole Nelson, James A. Griffin, David Smith, Todd Steiner, S. Noor Mohammad

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Photoreflectance studies of a series of GaAs_1-xN_x samples with x≤0.01 were discussed. Nitrogen activated bowing parameter was studied. It was found that the composition dependent bowing parameter of the band gap is same as obtained from first principle supercell calculations.

Original language	English (US)
Pages (from-to)	291-296
Number of pages	6
Journal	Solid-State Electronics
Volume	48
Issue number	2
DOIs	https://doi.org/10.1016/S0038-1101(03)00298-3
State	Published - Feb 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Nitrogen activated bowing parameter of GaAs1-xNx (x ≤ 1%) obtained from photoreflectance spectra",

abstract = "Photoreflectance studies of a series of GaAs1-xNx samples with x≤0.01 were discussed. Nitrogen activated bowing parameter was studied. It was found that the composition dependent bowing parameter of the band gap is same as obtained from first principle supercell calculations.",

author = "Arif Khan and Nicole Nelson and Griffin, {James A.} and David Smith and Todd Steiner and {Noor Mohammad}, S.",

note = "Funding Information: The research is supported by the Air Force Office of Scientific Research Grant no. F49620-02-1-0008. Thanks are due to Dr. Lawrence H. Robins, Dr. R. Glen Birdwell, Dr. K.S. Yang and Mr. M.M.E. Fahmi for technical help and constructive discussions.",

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doi = "10.1016/S0038-1101(03)00298-3",

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T1 - Nitrogen activated bowing parameter of GaAs1-xNx (x ≤ 1%) obtained from photoreflectance spectra

AU - Khan, Arif

AU - Nelson, Nicole

AU - Griffin, James A.

AU - Smith, David

AU - Steiner, Todd

AU - Noor Mohammad, S.

N1 - Funding Information: The research is supported by the Air Force Office of Scientific Research Grant no. F49620-02-1-0008. Thanks are due to Dr. Lawrence H. Robins, Dr. R. Glen Birdwell, Dr. K.S. Yang and Mr. M.M.E. Fahmi for technical help and constructive discussions.

PY - 2004/2

Y1 - 2004/2

N2 - Photoreflectance studies of a series of GaAs1-xNx samples with x≤0.01 were discussed. Nitrogen activated bowing parameter was studied. It was found that the composition dependent bowing parameter of the band gap is same as obtained from first principle supercell calculations.

AB - Photoreflectance studies of a series of GaAs1-xNx samples with x≤0.01 were discussed. Nitrogen activated bowing parameter was studied. It was found that the composition dependent bowing parameter of the band gap is same as obtained from first principle supercell calculations.

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ER -

Nitrogen activated bowing parameter of GaAs_1-xN_x (x ≤ 1%) obtained from photoreflectance spectra

Abstract

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