Nitrogen activated bowing parameter of GaAs1-xNx (x ≤ 1%) obtained from photoreflectance spectra

Arif Khan, Nicole Nelson, James A. Griffin, David Smith, Todd Steiner, S. Noor Mohammad

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Photoreflectance studies of a series of GaAs1-xNx samples with x≤0.01 were discussed. Nitrogen activated bowing parameter was studied. It was found that the composition dependent bowing parameter of the band gap is same as obtained from first principle supercell calculations.

Original languageEnglish (US)
Pages (from-to)291-296
Number of pages6
JournalSolid-State Electronics
Volume48
Issue number2
DOIs
StatePublished - Feb 1 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Nitrogen activated bowing parameter of GaAs<sub>1-x</sub>N<sub>x</sub> (x ≤ 1%) obtained from photoreflectance spectra'. Together they form a unique fingerprint.

  • Cite this