Nitrogen-activated bowing of dilute In yGa 1-yAs 1-xN x based on photoreflectance studies

M. M E Fahmi, Arif Khan, J. A. Griffin, G. L. Harris, Lawrence H. Robins, A. G. Birdwell, Youn Seon Kang, David Smith, Todd Steiner, S. Noor Mohammad

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Abstract

The dependence of the band gap (E G) and higher critical-point energies of dilute-nitrogen Ga 1-yIn yAs 1-xN x epilayers on nitrogen mole fraction (x) was investigated using photoreflectance spectroscopy. It was found that band gap decreases with increasing x in a highly nonlinear fashion. It was observed that as x increases, the bowing parameter become less negative. Results suggest that nitrogen-related impurity levels arise within the band gap of dilute-nitrogen GaInAsN alloys.

Original languageEnglish (US)
Pages (from-to)7576-7580
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number12
DOIs
StatePublished - Dec 15 2003

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Fahmi, M. M. E., Khan, A., Griffin, J. A., Harris, G. L., Robins, L. H., Birdwell, A. G., Kang, Y. S., Smith, D., Steiner, T., & Mohammad, S. N. (2003). Nitrogen-activated bowing of dilute In yGa 1-yAs 1-xN x based on photoreflectance studies. Journal of Applied Physics, 94(12), 7576-7580. https://doi.org/10.1063/1.1630191