Nitrogen-activated bowing of dilute In yGa 1-yAs 1-xN x based on photoreflectance studies

M. M E Fahmi, Arif Khan, J. A. Griffin, G. L. Harris, Lawrence H. Robins, A. G. Birdwell, Youn Seon Kang, David Smith, Todd Steiner, S. Noor Mohammad

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The dependence of the band gap (E G) and higher critical-point energies of dilute-nitrogen Ga 1-yIn yAs 1-xN x epilayers on nitrogen mole fraction (x) was investigated using photoreflectance spectroscopy. It was found that band gap decreases with increasing x in a highly nonlinear fashion. It was observed that as x increases, the bowing parameter become less negative. Results suggest that nitrogen-related impurity levels arise within the band gap of dilute-nitrogen GaInAsN alloys.

Original languageEnglish (US)
Pages (from-to)7576-7580
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number12
DOIs
StatePublished - Dec 15 2003

Fingerprint

nitrogen
critical point
impurities
spectroscopy
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Fahmi, M. M. E., Khan, A., Griffin, J. A., Harris, G. L., Robins, L. H., Birdwell, A. G., ... Mohammad, S. N. (2003). Nitrogen-activated bowing of dilute In yGa 1-yAs 1-xN x based on photoreflectance studies. Journal of Applied Physics, 94(12), 7576-7580. https://doi.org/10.1063/1.1630191

Nitrogen-activated bowing of dilute In yGa 1-yAs 1-xN x based on photoreflectance studies. / Fahmi, M. M E; Khan, Arif; Griffin, J. A.; Harris, G. L.; Robins, Lawrence H.; Birdwell, A. G.; Kang, Youn Seon; Smith, David; Steiner, Todd; Mohammad, S. Noor.

In: Journal of Applied Physics, Vol. 94, No. 12, 15.12.2003, p. 7576-7580.

Research output: Contribution to journalArticle

Fahmi, MME, Khan, A, Griffin, JA, Harris, GL, Robins, LH, Birdwell, AG, Kang, YS, Smith, D, Steiner, T & Mohammad, SN 2003, 'Nitrogen-activated bowing of dilute In yGa 1-yAs 1-xN x based on photoreflectance studies', Journal of Applied Physics, vol. 94, no. 12, pp. 7576-7580. https://doi.org/10.1063/1.1630191
Fahmi MME, Khan A, Griffin JA, Harris GL, Robins LH, Birdwell AG et al. Nitrogen-activated bowing of dilute In yGa 1-yAs 1-xN x based on photoreflectance studies. Journal of Applied Physics. 2003 Dec 15;94(12):7576-7580. https://doi.org/10.1063/1.1630191
Fahmi, M. M E ; Khan, Arif ; Griffin, J. A. ; Harris, G. L. ; Robins, Lawrence H. ; Birdwell, A. G. ; Kang, Youn Seon ; Smith, David ; Steiner, Todd ; Mohammad, S. Noor. / Nitrogen-activated bowing of dilute In yGa 1-yAs 1-xN x based on photoreflectance studies. In: Journal of Applied Physics. 2003 ; Vol. 94, No. 12. pp. 7576-7580.
@article{820ee214aad546e5ac81362731e9cc91,
title = "Nitrogen-activated bowing of dilute In yGa 1-yAs 1-xN x based on photoreflectance studies",
abstract = "The dependence of the band gap (E G) and higher critical-point energies of dilute-nitrogen Ga 1-yIn yAs 1-xN x epilayers on nitrogen mole fraction (x) was investigated using photoreflectance spectroscopy. It was found that band gap decreases with increasing x in a highly nonlinear fashion. It was observed that as x increases, the bowing parameter become less negative. Results suggest that nitrogen-related impurity levels arise within the band gap of dilute-nitrogen GaInAsN alloys.",
author = "Fahmi, {M. M E} and Arif Khan and Griffin, {J. A.} and Harris, {G. L.} and Robins, {Lawrence H.} and Birdwell, {A. G.} and Kang, {Youn Seon} and David Smith and Todd Steiner and Mohammad, {S. Noor}",
year = "2003",
month = "12",
day = "15",
doi = "10.1063/1.1630191",
language = "English (US)",
volume = "94",
pages = "7576--7580",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Nitrogen-activated bowing of dilute In yGa 1-yAs 1-xN x based on photoreflectance studies

AU - Fahmi, M. M E

AU - Khan, Arif

AU - Griffin, J. A.

AU - Harris, G. L.

AU - Robins, Lawrence H.

AU - Birdwell, A. G.

AU - Kang, Youn Seon

AU - Smith, David

AU - Steiner, Todd

AU - Mohammad, S. Noor

PY - 2003/12/15

Y1 - 2003/12/15

N2 - The dependence of the band gap (E G) and higher critical-point energies of dilute-nitrogen Ga 1-yIn yAs 1-xN x epilayers on nitrogen mole fraction (x) was investigated using photoreflectance spectroscopy. It was found that band gap decreases with increasing x in a highly nonlinear fashion. It was observed that as x increases, the bowing parameter become less negative. Results suggest that nitrogen-related impurity levels arise within the band gap of dilute-nitrogen GaInAsN alloys.

AB - The dependence of the band gap (E G) and higher critical-point energies of dilute-nitrogen Ga 1-yIn yAs 1-xN x epilayers on nitrogen mole fraction (x) was investigated using photoreflectance spectroscopy. It was found that band gap decreases with increasing x in a highly nonlinear fashion. It was observed that as x increases, the bowing parameter become less negative. Results suggest that nitrogen-related impurity levels arise within the band gap of dilute-nitrogen GaInAsN alloys.

UR - http://www.scopus.com/inward/record.url?scp=0346935207&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0346935207&partnerID=8YFLogxK

U2 - 10.1063/1.1630191

DO - 10.1063/1.1630191

M3 - Article

VL - 94

SP - 7576

EP - 7580

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

ER -