Ni on Si(111): Reactivity and interface structure

N. W. Cheung; R. J. Culbertson; L. C. Feldman; P. J. Silverman; K. W. West; J. W. Mayer

doi:10.1103/PhysRevLett.45.120

Ni on Si(111): Reactivity and interface structure

N. W. Cheung, R. J. Culbertson, L. C. Feldman, P. J. Silverman, K. W. West, J. W. Mayer

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

The megaelectronvolt ion-channeling technique has been applied to the study of the Ni-Si interface. The Ni-Si interface, prepared under UHV conditions at ambient temperature, shows an interfacial region containing 1×1016 atoms/cm2 of nonregistered Si. A measurement of the temperature dependence of the interfacial reactivity emphasizes the kinetic nature of the Ni-Si interface and the importance of Schottky-barrier height measurements at low temperatures for meaningful comparison with abrupt metal-semicon-ductor interface models.

Original language	English (US)
Pages (from-to)	120-124
Number of pages	5
Journal	Physical Review Letters
Volume	45
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevLett.45.120
State	Published - Jan 1 1980
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1103/PhysRevLett.45.120

Cite this

@article{006c171388074de697561e12692b2380,

title = "Ni on Si(111): Reactivity and interface structure",

abstract = "The megaelectronvolt ion-channeling technique has been applied to the study of the Ni-Si interface. The Ni-Si interface, prepared under UHV conditions at ambient temperature, shows an interfacial region containing 1×1016 atoms/cm2 of nonregistered Si. A measurement of the temperature dependence of the interfacial reactivity emphasizes the kinetic nature of the Ni-Si interface and the importance of Schottky-barrier height measurements at low temperatures for meaningful comparison with abrupt metal-semicon-ductor interface models.",

author = "Cheung, {N. W.} and Culbertson, {R. J.} and Feldman, {L. C.} and Silverman, {P. J.} and West, {K. W.} and Mayer, {J. W.}",

year = "1980",

month = jan,

day = "1",

doi = "10.1103/PhysRevLett.45.120",

language = "English (US)",

volume = "45",

pages = "120--124",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "2",

}

TY - JOUR

T1 - Ni on Si(111)

T2 - Reactivity and interface structure

AU - Cheung, N. W.

AU - Culbertson, R. J.

AU - Feldman, L. C.

AU - Silverman, P. J.

AU - West, K. W.

AU - Mayer, J. W.

PY - 1980/1/1

Y1 - 1980/1/1

N2 - The megaelectronvolt ion-channeling technique has been applied to the study of the Ni-Si interface. The Ni-Si interface, prepared under UHV conditions at ambient temperature, shows an interfacial region containing 1×1016 atoms/cm2 of nonregistered Si. A measurement of the temperature dependence of the interfacial reactivity emphasizes the kinetic nature of the Ni-Si interface and the importance of Schottky-barrier height measurements at low temperatures for meaningful comparison with abrupt metal-semicon-ductor interface models.

AB - The megaelectronvolt ion-channeling technique has been applied to the study of the Ni-Si interface. The Ni-Si interface, prepared under UHV conditions at ambient temperature, shows an interfacial region containing 1×1016 atoms/cm2 of nonregistered Si. A measurement of the temperature dependence of the interfacial reactivity emphasizes the kinetic nature of the Ni-Si interface and the importance of Schottky-barrier height measurements at low temperatures for meaningful comparison with abrupt metal-semicon-ductor interface models.

UR - http://www.scopus.com/inward/record.url?scp=4243314063&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4243314063&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.45.120

DO - 10.1103/PhysRevLett.45.120

M3 - Article

AN - SCOPUS:4243314063

SN - 0031-9007

VL - 45

SP - 120

EP - 124

JO - Physical Review Letters

JF - Physical Review Letters

IS - 2

ER -

Ni on Si(111): Reactivity and interface structure

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this