Ni on Si(111): Reactivity and interface structure

N. W. Cheung, R. J. Culbertson, L. C. Feldman, P. J. Silverman, K. W. West, J. W. Mayer

Research output: Contribution to journalArticlepeer-review

82 Scopus citations

Abstract

The megaelectronvolt ion-channeling technique has been applied to the study of the Ni-Si interface. The Ni-Si interface, prepared under UHV conditions at ambient temperature, shows an interfacial region containing 1×1016 atoms/cm2 of nonregistered Si. A measurement of the temperature dependence of the interfacial reactivity emphasizes the kinetic nature of the Ni-Si interface and the importance of Schottky-barrier height measurements at low temperatures for meaningful comparison with abrupt metal-semicon-ductor interface models.

Original languageEnglish (US)
Pages (from-to)120-124
Number of pages5
JournalPhysical Review Letters
Volume45
Issue number2
DOIs
StatePublished - Jan 1 1980
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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