The megaelectronvolt ion-channeling technique has been applied to the study of the Ni-Si interface. The Ni-Si interface, prepared under UHV conditions at ambient temperature, shows an interfacial region containing 1×1016 atoms/cm2 of nonregistered Si. A measurement of the temperature dependence of the interfacial reactivity emphasizes the kinetic nature of the Ni-Si interface and the importance of Schottky-barrier height measurements at low temperatures for meaningful comparison with abrupt metal-semicon-ductor interface models.
|Original language||English (US)|
|Number of pages||5|
|Journal||Physical Review Letters|
|State||Published - Jan 1 1980|
ASJC Scopus subject areas
- Physics and Astronomy(all)