New technique for producing large-area as-deposited zero-stress LPCVD polysilicon films: the MultiPoly process

Jie Yang, Harold Kahn, An Qiang He, Stephen Phillips, Arthur H. Heuer

Research output: Contribution to journalArticle

78 Citations (Scopus)

Abstract

Polysilicon films deposited by low-pressure chemical vapor deposition (LPCVD) exhibit tensile or compressive residual stresses, depending on the deposition temperature. Polysilicon films composed of alternating tensile and compressive layers can display any overall stress value between those of the individual layers, including a state of zero overall residual stress, depending on the relative thickness of each layer. The residual stress gradient can be similarly controlled by the layer thicknesses and distribution. This has been demonstrated with a ten-layer near-zero stress (< 10 MPa), near-zero stress gradient (≤ 0.2 MPa/μm) polysilicon film, containing flat cantilever beams whose length-thickness ratios exceed 150. Using multilayer deposition to control the stresses and stress gradients of polysilicon films is termed the MultiPoly process.

Original languageEnglish (US)
Pages (from-to)485-494
Number of pages10
JournalJournal of Microelectromechanical Systems
Volume9
Issue number4
DOIs
StatePublished - Dec 2000
Externally publishedYes

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Low pressure chemical vapor deposition
Polysilicon
Residual stresses
Cantilever beams
Compressive stress
Multilayers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering

Cite this

New technique for producing large-area as-deposited zero-stress LPCVD polysilicon films : the MultiPoly process. / Yang, Jie; Kahn, Harold; He, An Qiang; Phillips, Stephen; Heuer, Arthur H.

In: Journal of Microelectromechanical Systems, Vol. 9, No. 4, 12.2000, p. 485-494.

Research output: Contribution to journalArticle

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