New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: The tetragermane case

Chi Xu, Richard T. Beeler, Liying Jiang, Gordon Grzybowski, Andrew Chizmeshya, Jose Menendez, John Kouvetakis

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

We introduce a practical chemical vapor deposition strategy for next-generation Ge-on-Si epitaxy utilizing recently introduced Ge 4H10 hydride sources that confer unprecedented deposition efficiencies at very low-temperatures (<400 °C). The corresponding high growth rates produce thick bulk-like Ge films with structural and electrical properties significantly improved relative to state-of-the-art results obtained using conventional approaches. The use of a pure, single-source compound facilitates the control of residual doping, and enables p-i-n devices whose dark currents are not entirely determined by defects and whose zero-bias optical collection efficiencies are higher than obtained from samples fabricated using alternative Ge-on-Si approaches. The reaction pathways leading to the high-yield synthesis of Ge4H10 are identified on the basis of quantum thermochemistry simulations. The results suggest a simple approach to routine synthesis of tetragermane as the main product in quantities sufficient to be deployed as a commercial source.

Original languageEnglish (US)
Article number105001
JournalSemiconductor Science and Technology
Volume28
Issue number10
DOIs
StatePublished - Oct 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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