Abstract
Novel precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si 1-yC y thin films on (001) Si substrates. Films with carbon compositions ranging up to 20 at.% were deposited at substrate temperatures of 600-750 °C using interactions of C(SiH 3) 4 or C(SiH 2Cl) 4 (C-H free precursors incorporating Si 4C tetrahedra) and SiH 4 gas mixtures. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information respectively. The effect of precursor chemistry on the composition and structure of the materials is discussed.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Publisher | Materials Research Society |
Pages | 723-728 |
Number of pages | 6 |
Volume | 441 |
State | Published - 1997 |
Event | Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996 |
Other
Other | Proceedings of the 1996 MRS Fall Meeting |
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City | Boston, MA, USA |
Period | 12/2/96 → 12/6/96 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials