New silicon-carbon materials incorporating Si 4C building blocks

D. Chandrasekhar, John Kouvetakis, J. Mc Murran, M. Todd, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Novel precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si 1-yC y thin films on (001) Si substrates. Films with carbon compositions ranging up to 20 at.% were deposited at substrate temperatures of 600-750 °C using interactions of C(SiH 3) 4 or C(SiH 2Cl) 4 (C-H free precursors incorporating Si 4C tetrahedra) and SiH 4 gas mixtures. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information respectively. The effect of precursor chemistry on the composition and structure of the materials is discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages723-728
Number of pages6
Volume441
StatePublished - 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

Other

OtherProceedings of the 1996 MRS Fall Meeting
CityBoston, MA, USA
Period12/2/9612/6/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Chandrasekhar, D., Kouvetakis, J., Mc Murran, J., Todd, M., & Smith, D. (1997). New silicon-carbon materials incorporating Si 4C building blocks In Materials Research Society Symposium - Proceedings (Vol. 441, pp. 723-728). Materials Research Society.