New silicon-carbon materials incorporating Si 4C building blocks

D. Chandrasekhar, John Kouvetakis, J. Mc Murran, M. Todd, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Novel precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si 1-yC y thin films on (001) Si substrates. Films with carbon compositions ranging up to 20 at.% were deposited at substrate temperatures of 600-750 °C using interactions of C(SiH 3) 4 or C(SiH 2Cl) 4 (C-H free precursors incorporating Si 4C tetrahedra) and SiH 4 gas mixtures. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information respectively. The effect of precursor chemistry on the composition and structure of the materials is discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages723-728
Number of pages6
Volume441
StatePublished - 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

Other

OtherProceedings of the 1996 MRS Fall Meeting
CityBoston, MA, USA
Period12/2/9612/6/96

Fingerprint

Silicon
Carbon
Chemical analysis
Rutherford backscattering spectroscopy
Ultrahigh vacuum
Substrates
Gas mixtures
Spectrometry
Chemical vapor deposition
Infrared spectroscopy
Deposits
Transmission electron microscopy
Thin films
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Chandrasekhar, D., Kouvetakis, J., Mc Murran, J., Todd, M., & Smith, D. (1997). New silicon-carbon materials incorporating Si 4C building blocks In Materials Research Society Symposium - Proceedings (Vol. 441, pp. 723-728). Materials Research Society.

New silicon-carbon materials incorporating Si 4C building blocks . / Chandrasekhar, D.; Kouvetakis, John; Mc Murran, J.; Todd, M.; Smith, David.

Materials Research Society Symposium - Proceedings. Vol. 441 Materials Research Society, 1997. p. 723-728.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chandrasekhar, D, Kouvetakis, J, Mc Murran, J, Todd, M & Smith, D 1997, New silicon-carbon materials incorporating Si 4C building blocks in Materials Research Society Symposium - Proceedings. vol. 441, Materials Research Society, pp. 723-728, Proceedings of the 1996 MRS Fall Meeting, Boston, MA, USA, 12/2/96.
Chandrasekhar D, Kouvetakis J, Mc Murran J, Todd M, Smith D. New silicon-carbon materials incorporating Si 4C building blocks In Materials Research Society Symposium - Proceedings. Vol. 441. Materials Research Society. 1997. p. 723-728
Chandrasekhar, D. ; Kouvetakis, John ; Mc Murran, J. ; Todd, M. ; Smith, David. / New silicon-carbon materials incorporating Si 4C building blocks Materials Research Society Symposium - Proceedings. Vol. 441 Materials Research Society, 1997. pp. 723-728
@inproceedings{6909d494ca3549558297263894339303,
title = "New silicon-carbon materials incorporating Si 4C building blocks",
abstract = "Novel precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si 1-yC y thin films on (001) Si substrates. Films with carbon compositions ranging up to 20 at.{\%} were deposited at substrate temperatures of 600-750 °C using interactions of C(SiH 3) 4 or C(SiH 2Cl) 4 (C-H free precursors incorporating Si 4C tetrahedra) and SiH 4 gas mixtures. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information respectively. The effect of precursor chemistry on the composition and structure of the materials is discussed.",
author = "D. Chandrasekhar and John Kouvetakis and {Mc Murran}, J. and M. Todd and David Smith",
year = "1997",
language = "English (US)",
volume = "441",
pages = "723--728",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",

}

TY - GEN

T1 - New silicon-carbon materials incorporating Si 4C building blocks

AU - Chandrasekhar, D.

AU - Kouvetakis, John

AU - Mc Murran, J.

AU - Todd, M.

AU - Smith, David

PY - 1997

Y1 - 1997

N2 - Novel precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si 1-yC y thin films on (001) Si substrates. Films with carbon compositions ranging up to 20 at.% were deposited at substrate temperatures of 600-750 °C using interactions of C(SiH 3) 4 or C(SiH 2Cl) 4 (C-H free precursors incorporating Si 4C tetrahedra) and SiH 4 gas mixtures. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information respectively. The effect of precursor chemistry on the composition and structure of the materials is discussed.

AB - Novel precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si 1-yC y thin films on (001) Si substrates. Films with carbon compositions ranging up to 20 at.% were deposited at substrate temperatures of 600-750 °C using interactions of C(SiH 3) 4 or C(SiH 2Cl) 4 (C-H free precursors incorporating Si 4C tetrahedra) and SiH 4 gas mixtures. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information respectively. The effect of precursor chemistry on the composition and structure of the materials is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0030650907&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030650907&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0030650907

VL - 441

SP - 723

EP - 728

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

ER -