New shallow acceptor levels in GaAs

Brian Skromme, S. S. Bose, G. E. Stillman

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Two previously unreported shallow acceptor levels with ionization energies of 25.2 and 43.2 meV, respectively, have been observed in a number of vapor phase epitaxial and metalorganic chemical vapor deposited GaAs samples grown in several different laboratories. The corresponding donor-to-acceptor and conduction band-to-acceptor transitions are identified in low temperature photoluminescence spectra by means of their temperature and excitation intensity-dependence. These levels are present as residual acceptors in high purity material, but their chemical and/or metallurgical nature has not yet been determined.

Original languageEnglish (US)
Pages (from-to)345-348
Number of pages4
JournalJournal of Electronic Materials
Volume15
Issue number6
DOIs
StatePublished - Nov 1986
Externally publishedYes

Fingerprint

Vapors
Ionization potential
Electron transitions
Conduction bands
Photoluminescence
conduction bands
purity
vapors
vapor phases
photoluminescence
ionization
Temperature
excitation
temperature
gallium arsenide
energy

Keywords

  • Gallium Arsenide (GaAs)
  • metalorganic chemical
  • photoluminescence.
  • shallow acceptors
  • vapor deposition
  • vapor-phase epitaxy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

New shallow acceptor levels in GaAs. / Skromme, Brian; Bose, S. S.; Stillman, G. E.

In: Journal of Electronic Materials, Vol. 15, No. 6, 11.1986, p. 345-348.

Research output: Contribution to journalArticle

Skromme, Brian ; Bose, S. S. ; Stillman, G. E. / New shallow acceptor levels in GaAs. In: Journal of Electronic Materials. 1986 ; Vol. 15, No. 6. pp. 345-348.
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