New shallow acceptor levels in GaAs

B. J. Skromme, S. S. Bose, G. E. Stillman

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Two previously unreported shallow acceptor levels with ionization energies of 25.2 and 43.2 meV, respectively, have been observed in a number of vapor phase epitaxial and metalorganic chemical vapor deposited GaAs samples grown in several different laboratories. The corresponding donor-to-acceptor and conduction band-to-acceptor transitions are identified in low temperature photoluminescence spectra by means of their temperature and excitation intensity-dependence. These levels are present as residual acceptors in high purity material, but their chemical and/or metallurgical nature has not yet been determined.

Original languageEnglish (US)
Pages (from-to)345-348
Number of pages4
JournalJournal of Electronic Materials
Volume15
Issue number6
DOIs
StatePublished - Nov 1 1986
Externally publishedYes

Keywords

  • Gallium Arsenide (GaAs)
  • metalorganic chemical
  • photoluminescence.
  • shallow acceptors
  • vapor deposition
  • vapor-phase epitaxy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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