New physical power MOSFET model for improved simulation in power electronic design

James Victory, Ira Miller, Julian Sanchez, Thomas DeMassa, Bruno Welfert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A physically based power MOSFET model is derived based on the charge-sheet analysis. This is the first time a charge-sheet approach has been successfully used in modeling a power MOSFET. The continuous nature of the charge-sheet model allows for the development of a continuous I-V model for the power MOSFET from subthreshold to saturation. The generalized form of the charge-sheet model enables the physical modeling of the nonuniform doping through the MOS channel region of the power MOSFET. A physical model of the power MOSFET drift region is combined with the channel model to give a complete physical system of equations which is solved numerically. The model includes detailed calculations of the drift region parameters including the variation of the internal depletion widths with external bias. The physical, continuous behavior of the model provides easy extraction of small signal parameters and interelectrode capacitances. Test measurements of real power MOSFETS are used as a comparison to support the model results.

Original languageEnglish (US)
Title of host publicationIEEE Workshop on Power Electronics in Transportation
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages83-90
Number of pages8
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 IEEE Workshop on Power Electronics in Transportation - Dearborn, MI, USA
Duration: Oct 20 1994Oct 21 1994

Other

OtherProceedings of the 1994 IEEE Workshop on Power Electronics in Transportation
CityDearborn, MI, USA
Period10/20/9410/21/94

Fingerprint

Power electronics
electronics
simulation
Power MOSFET
Capacitance
Doping (additives)
trend

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Transportation

Cite this

Victory, J., Miller, I., Sanchez, J., DeMassa, T., & Welfert, B. (1994). New physical power MOSFET model for improved simulation in power electronic design. In IEEE Workshop on Power Electronics in Transportation (pp. 83-90). Piscataway, NJ, United States: IEEE.

New physical power MOSFET model for improved simulation in power electronic design. / Victory, James; Miller, Ira; Sanchez, Julian; DeMassa, Thomas; Welfert, Bruno.

IEEE Workshop on Power Electronics in Transportation. Piscataway, NJ, United States : IEEE, 1994. p. 83-90.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Victory, J, Miller, I, Sanchez, J, DeMassa, T & Welfert, B 1994, New physical power MOSFET model for improved simulation in power electronic design. in IEEE Workshop on Power Electronics in Transportation. IEEE, Piscataway, NJ, United States, pp. 83-90, Proceedings of the 1994 IEEE Workshop on Power Electronics in Transportation, Dearborn, MI, USA, 10/20/94.
Victory J, Miller I, Sanchez J, DeMassa T, Welfert B. New physical power MOSFET model for improved simulation in power electronic design. In IEEE Workshop on Power Electronics in Transportation. Piscataway, NJ, United States: IEEE. 1994. p. 83-90
Victory, James ; Miller, Ira ; Sanchez, Julian ; DeMassa, Thomas ; Welfert, Bruno. / New physical power MOSFET model for improved simulation in power electronic design. IEEE Workshop on Power Electronics in Transportation. Piscataway, NJ, United States : IEEE, 1994. pp. 83-90
@inproceedings{ef6fddb629754be2abe0909d611f85a8,
title = "New physical power MOSFET model for improved simulation in power electronic design",
abstract = "A physically based power MOSFET model is derived based on the charge-sheet analysis. This is the first time a charge-sheet approach has been successfully used in modeling a power MOSFET. The continuous nature of the charge-sheet model allows for the development of a continuous I-V model for the power MOSFET from subthreshold to saturation. The generalized form of the charge-sheet model enables the physical modeling of the nonuniform doping through the MOS channel region of the power MOSFET. A physical model of the power MOSFET drift region is combined with the channel model to give a complete physical system of equations which is solved numerically. The model includes detailed calculations of the drift region parameters including the variation of the internal depletion widths with external bias. The physical, continuous behavior of the model provides easy extraction of small signal parameters and interelectrode capacitances. Test measurements of real power MOSFETS are used as a comparison to support the model results.",
author = "James Victory and Ira Miller and Julian Sanchez and Thomas DeMassa and Bruno Welfert",
year = "1994",
language = "English (US)",
pages = "83--90",
booktitle = "IEEE Workshop on Power Electronics in Transportation",
publisher = "IEEE",

}

TY - GEN

T1 - New physical power MOSFET model for improved simulation in power electronic design

AU - Victory, James

AU - Miller, Ira

AU - Sanchez, Julian

AU - DeMassa, Thomas

AU - Welfert, Bruno

PY - 1994

Y1 - 1994

N2 - A physically based power MOSFET model is derived based on the charge-sheet analysis. This is the first time a charge-sheet approach has been successfully used in modeling a power MOSFET. The continuous nature of the charge-sheet model allows for the development of a continuous I-V model for the power MOSFET from subthreshold to saturation. The generalized form of the charge-sheet model enables the physical modeling of the nonuniform doping through the MOS channel region of the power MOSFET. A physical model of the power MOSFET drift region is combined with the channel model to give a complete physical system of equations which is solved numerically. The model includes detailed calculations of the drift region parameters including the variation of the internal depletion widths with external bias. The physical, continuous behavior of the model provides easy extraction of small signal parameters and interelectrode capacitances. Test measurements of real power MOSFETS are used as a comparison to support the model results.

AB - A physically based power MOSFET model is derived based on the charge-sheet analysis. This is the first time a charge-sheet approach has been successfully used in modeling a power MOSFET. The continuous nature of the charge-sheet model allows for the development of a continuous I-V model for the power MOSFET from subthreshold to saturation. The generalized form of the charge-sheet model enables the physical modeling of the nonuniform doping through the MOS channel region of the power MOSFET. A physical model of the power MOSFET drift region is combined with the channel model to give a complete physical system of equations which is solved numerically. The model includes detailed calculations of the drift region parameters including the variation of the internal depletion widths with external bias. The physical, continuous behavior of the model provides easy extraction of small signal parameters and interelectrode capacitances. Test measurements of real power MOSFETS are used as a comparison to support the model results.

UR - http://www.scopus.com/inward/record.url?scp=0028746108&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028746108&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028746108

SP - 83

EP - 90

BT - IEEE Workshop on Power Electronics in Transportation

PB - IEEE

CY - Piscataway, NJ, United States

ER -