New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation

Yu Cao; Takashi Sato; Michael Orshansky; Dennis Sylvester; Chenming Hu

New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation

Yu Cao, Takashi Sato, Michael Orshansky, Dennis Sylvester, Chenming Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new paradigm of predictive MOSFET and interconnect modeling is introduced. This approach is developed to specifically address SPICE compatible parameters for future technology generations. For a given technology node, designers can use default values or directly input L _eff, T _ox, V _t, R _dsw and interconnect dimensions to instantly obtain a BSIM3v3 customized model for early stages of circuit design and research. Models for 0.18μm and 0.13μm technology nodes with L _eff down to 70nm are currently available on the web. Comparisons with published data and 2D simulations are used to verify this predictive technology model.

Original language	English (US)
Title of host publication	Proceedings of the Custom Integrated Circuits Conference
Publisher	IEEE
Pages	201-204
Number of pages	4
State	Published - 2000
Externally published	Yes
Event	CICC 2000: 22nd Annual Custom Integrated Circuits Conference - Orlando, FL, USA Duration: May 21 2000 → May 24 2000

Other

Other	CICC 2000: 22nd Annual Custom Integrated Circuits Conference
City	Orlando, FL, USA
Period	5/21/00 → 5/24/00

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@inproceedings{e1df904e2b2642b5816571878038eb28,

title = "New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation",

abstract = "A new paradigm of predictive MOSFET and interconnect modeling is introduced. This approach is developed to specifically address SPICE compatible parameters for future technology generations. For a given technology node, designers can use default values or directly input L eff, T ox, V t, R dsw and interconnect dimensions to instantly obtain a BSIM3v3 customized model for early stages of circuit design and research. Models for 0.18μm and 0.13μm technology nodes with L eff down to 70nm are currently available on the web. Comparisons with published data and 2D simulations are used to verify this predictive technology model. ",

author = "Yu Cao and Takashi Sato and Michael Orshansky and Dennis Sylvester and Chenming Hu",

year = "2000",

language = "English (US)",

pages = "201--204",

booktitle = "Proceedings of the Custom Integrated Circuits Conference",

publisher = "IEEE",

note = "CICC 2000: 22nd Annual Custom Integrated Circuits Conference ; Conference date: 21-05-2000 Through 24-05-2000",

}

TY - GEN

T1 - New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation

AU - Cao, Yu

AU - Sato, Takashi

AU - Orshansky, Michael

AU - Sylvester, Dennis

AU - Hu, Chenming

PY - 2000

Y1 - 2000

N2 - A new paradigm of predictive MOSFET and interconnect modeling is introduced. This approach is developed to specifically address SPICE compatible parameters for future technology generations. For a given technology node, designers can use default values or directly input L eff, T ox, V t, R dsw and interconnect dimensions to instantly obtain a BSIM3v3 customized model for early stages of circuit design and research. Models for 0.18μm and 0.13μm technology nodes with L eff down to 70nm are currently available on the web. Comparisons with published data and 2D simulations are used to verify this predictive technology model.

AB - A new paradigm of predictive MOSFET and interconnect modeling is introduced. This approach is developed to specifically address SPICE compatible parameters for future technology generations. For a given technology node, designers can use default values or directly input L eff, T ox, V t, R dsw and interconnect dimensions to instantly obtain a BSIM3v3 customized model for early stages of circuit design and research. Models for 0.18μm and 0.13μm technology nodes with L eff down to 70nm are currently available on the web. Comparisons with published data and 2D simulations are used to verify this predictive technology model.

UR - http://www.scopus.com/inward/record.url?scp=0033712799&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033712799&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0033712799

SP - 201

EP - 204

BT - Proceedings of the Custom Integrated Circuits Conference

PB - IEEE

T2 - CICC 2000: 22nd Annual Custom Integrated Circuits Conference

Y2 - 21 May 2000 through 24 May 2000

ER -

New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation

Abstract

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ASJC Scopus subject areas

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