New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation

Yu Cao, Takashi Sato, Michael Orshansky, Dennis Sylvester, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

426 Scopus citations

Abstract

A new paradigm of predictive MOSFET and interconnect modeling is introduced. This approach is developed to specifically address SPICE compatible parameters for future technology generations. For a given technology node, designers can use default values or directly input L eff, T ox, V t, R dsw and interconnect dimensions to instantly obtain a BSIM3v3 customized model for early stages of circuit design and research. Models for 0.18μm and 0.13μm technology nodes with L eff down to 70nm are currently available on the web. Comparisons with published data and 2D simulations are used to verify this predictive technology model.

Original languageEnglish (US)
Title of host publicationProceedings of the Custom Integrated Circuits Conference
PublisherIEEE
Pages201-204
Number of pages4
StatePublished - 2000
Externally publishedYes
EventCICC 2000: 22nd Annual Custom Integrated Circuits Conference - Orlando, FL, USA
Duration: May 21 2000May 24 2000

Other

OtherCICC 2000: 22nd Annual Custom Integrated Circuits Conference
CityOrlando, FL, USA
Period5/21/005/24/00

    Fingerprint

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Cao, Y., Sato, T., Orshansky, M., Sylvester, D., & Hu, C. (2000). New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation. In Proceedings of the Custom Integrated Circuits Conference (pp. 201-204). IEEE.