NEW MODEL FOR SLOW CURRENT DRIFT IN InP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS.

Stephen Goodnick, T. Hwang, C. W. Wilmsen

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The drift in channel current of SiO//2/InP metal-insulator-semiconductor field-effect transistors has been calculated using a model in which electrons thermionically tunnel to a conducting layer of In//2O//3 within the native oxide at the interface. Calculations based on this model using reasonable values for the interface parameters are in good agreement with experimental data. The model differs from previous drift models in that trapping occurs between bulklike materials and not through discrete trap levels and is based on physical evidence for the structure of the SiO//2/InP interface.

Original languageEnglish (US)
Pages (from-to)453-455
Number of pages3
JournalApplied Physics Letters
Volume44
Issue number4
DOIs
StatePublished - Jan 1 1984
Externally publishedYes

Fingerprint

MIS (semiconductors)
field effect transistors
tunnels
trapping
traps
conduction
oxides
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

NEW MODEL FOR SLOW CURRENT DRIFT IN InP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS. / Goodnick, Stephen; Hwang, T.; Wilmsen, C. W.

In: Applied Physics Letters, Vol. 44, No. 4, 01.01.1984, p. 453-455.

Research output: Contribution to journalArticle

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