New model for slow current drift in InP metal-insulator-semiconductor field-effect transistors

S. M. Goodnick; T. Hwang; C. W. Wilmsen

doi:10.1063/1.94764

New model for slow current drift in InP metal-insulator-semiconductor field-effect transistors

S. M. Goodnick, T. Hwang, C. W. Wilmsen

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

The drift in channel current of SiO₂/InP metal-insulator- semiconductor field-effect transistors has been calculated using a model in which electrons thermionically tunnel to a conducting layer of In ₂O₃ within the native oxide at the interface. Calculations based on this model using reasonable values for the interface parameters are in good agreement with experimental data. The model differs from previous drift models in that trapping occurs between bulklike materials and not through discrete trap levels and is based on physical evidence for the structure of the SiO₂/InP interface.

Original language	English (US)
Pages (from-to)	453-455
Number of pages	3
Journal	Applied Physics Letters
Volume	44
Issue number	4
DOIs	https://doi.org/10.1063/1.94764
State	Published - 1984
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "New model for slow current drift in InP metal-insulator-semiconductor field-effect transistors",

abstract = "The drift in channel current of SiO2/InP metal-insulator- semiconductor field-effect transistors has been calculated using a model in which electrons thermionically tunnel to a conducting layer of In 2O3 within the native oxide at the interface. Calculations based on this model using reasonable values for the interface parameters are in good agreement with experimental data. The model differs from previous drift models in that trapping occurs between bulklike materials and not through discrete trap levels and is based on physical evidence for the structure of the SiO2/InP interface.",

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year = "1984",

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AU - Goodnick, S. M.

AU - Hwang, T.

AU - Wilmsen, C. W.

PY - 1984

Y1 - 1984

N2 - The drift in channel current of SiO2/InP metal-insulator- semiconductor field-effect transistors has been calculated using a model in which electrons thermionically tunnel to a conducting layer of In 2O3 within the native oxide at the interface. Calculations based on this model using reasonable values for the interface parameters are in good agreement with experimental data. The model differs from previous drift models in that trapping occurs between bulklike materials and not through discrete trap levels and is based on physical evidence for the structure of the SiO2/InP interface.

AB - The drift in channel current of SiO2/InP metal-insulator- semiconductor field-effect transistors has been calculated using a model in which electrons thermionically tunnel to a conducting layer of In 2O3 within the native oxide at the interface. Calculations based on this model using reasonable values for the interface parameters are in good agreement with experimental data. The model differs from previous drift models in that trapping occurs between bulklike materials and not through discrete trap levels and is based on physical evidence for the structure of the SiO2/InP interface.

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New model for slow current drift in InP metal-insulator-semiconductor field-effect transistors

Abstract

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