Abstract
A new GaAs surface passivation method, CS 2 treatment at moderate temperature was developed for effective passivation of GaAs surfaces. The CS 2 treatment of GaAs surfaces at 350 °C and 10 atm leads to deposition of a homogeneous film, with a thickness of several hundred angstrom. The passivation layer thus produced causes a significant enhancement in room temperature photoluminescence intensity and the passivation effect of the sulfide film was confirmed by Raman spectroscopy. The passivation layer remained electrically and chemically stable over a period of nine months under ambient atmospheric conditions. In-depth Auger electron spectroscopy (AES) revealed that the carbon and oxygen content in the film was negligible, whereas sulfur was uniformly distributed throughout the film. A metal-insulator-semiconductor diode whose insulating layer is produced by the CS 2 treatment shows well-defined accumulation and depletion regions in its capacitance-voltage (C-V) characteristics with low hysteresis.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Publisher | Materials Research Society |
Pages | 529-535 |
Number of pages | 7 |
Volume | 406 |
State | Published - 1996 |
Event | Proceedings of the 1995 MRS Fall Symposium - Boston, MA, USA Duration: Nov 27 1995 → Nov 30 1995 |
Other
Other | Proceedings of the 1995 MRS Fall Symposium |
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City | Boston, MA, USA |
Period | 11/27/95 → 11/30/95 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials