New method for the electronic and chemical passivation of GaAs surfaces using CS 2

Ju Hyung Lee, Yanzhen Xu, Veronica Burrows, Paul F. McMillan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A new GaAs surface passivation method, CS 2 treatment at moderate temperature was developed for effective passivation of GaAs surfaces. The CS 2 treatment of GaAs surfaces at 350 °C and 10 atm leads to deposition of a homogeneous film, with a thickness of several hundred angstroms. The passivation layer thus produced causes a significant enhancement in room temperature photoluminescence intensity and the passivation effect of the sulfide film was confirmed by Raman spectroscopy. The passivation layer remained electrically and chemically stable over a period of nine months under ambient atmospheric conditions. In-depth Auger electron spectroscopy (AES) revealed that the carbon and oxygen content in the film was negligible, whereas sulfur was uniformly distributed throughout the film. A metal-insulator-semiconductor diode whose insulating layer is produced by the CS 2 treatment shows well-defined accumulation and depletion regions in its capacitance-voltage (C-V) characteristics with low hysteresis.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages421-427
Number of pages7
Volume405
StatePublished - 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

Other

OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA
Period11/26/9512/1/95

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lee, J. H., Xu, Y., Burrows, V., & McMillan, P. F. (1996). New method for the electronic and chemical passivation of GaAs surfaces using CS 2 In Materials Research Society Symposium - Proceedings (Vol. 405, pp. 421-427). Materials Research Society.