New materials for Si-based heterostructure engineering: Synthesis of Si-Ge-C alloys and compounds by UHV-CVD and molecular chemistry

Research output: Contribution to journalArticle

2 Citations (Scopus)
Original languageEnglish (US)
Pages (from-to)113-129
Number of pages17
JournalACS Symposium Series
Volume727
StatePublished - 1999

Fingerprint

Heterojunctions
Chemical vapor deposition

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

@article{8afbb1527b2d4871b72c0d308933b242,
title = "New materials for Si-based heterostructure engineering: Synthesis of Si-Ge-C alloys and compounds by UHV-CVD and molecular chemistry",
author = "John Kouvetakis and Nesting, {D. C.} and David Smith",
year = "1999",
language = "English (US)",
volume = "727",
pages = "113--129",
journal = "ACS Symposium Series",
issn = "0097-6156",
publisher = "American Chemical Society",

}

TY - JOUR

T1 - New materials for Si-based heterostructure engineering

T2 - Synthesis of Si-Ge-C alloys and compounds by UHV-CVD and molecular chemistry

AU - Kouvetakis, John

AU - Nesting, D. C.

AU - Smith, David

PY - 1999

Y1 - 1999

UR - http://www.scopus.com/inward/record.url?scp=0041911543&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041911543&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0041911543

VL - 727

SP - 113

EP - 129

JO - ACS Symposium Series

JF - ACS Symposium Series

SN - 0097-6156

ER -