New Layered Materials in the K-In-Ge-As System: K₈In₈Ge₅As₁₇and K₅In₅Ge₅As₁₄

Exploratory synthesis in the K-In-Ge-As system has yielded the unusual layered compounds K₈In₈Ge₅As₁₇(1) and K₅In₅Ge₅As₁₄(2), both of which contain In-Ge-As layers with interleaved potassium ions, Ge-Ge bonds, InAs₄tetrahedra, As-As bonds, and rows of Ge₂As₆dimers. Compound 1 has As₃groups, while compound 2 has infinite As ribbons on both faces of each layer. Unlike compound 1, compound 2 has substitutional defects where indium partially occupies each of the three independent germanium sites in the ratio of 1:5 for In:Ge. This partial occupancy makes 2 an electron-precise compound. The Ge(In)-Ge(In) bond of 2 is longer than the Ge-Ge bond of 1, and this bond lengthening effect was confirmed by performing DFT-MO calculations on the model compounds H₃Ge-GeH₃and H₃Ge-InH^-₃. Possible implications of electron imprecise formulas determined by X-ray crystal structure determinations are discussed. Compound 1: space groupP2₁/cwitha=18.394 (8) Å,b=19.087 (7) Å,c=25.360 (3) Å,β=105.71 (2)°,V=8571 (4) ų, andD_calcd=4.45g/cm³forZ=4. Refinement on 4455 reflections yieldedR(R_w)=6.8%(7.8%). Compound 2: space groupC2/mwitha=40.00 (1) Å,b=3.925 (2) Å,c=10.299 (3),β=99.97 (2)°,V=1592 (1) ų, andD_calcd= 4.55g/cm³forZ=8. Refinement on 1206 reflections yieldedR(R_w)=5.6% (5.7%).