New IR semiconductors in the Si-Ge-Sn system

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We will discuss CVD growth, characterization and properties of novel Ge 1-zSn z/Ge 1-x-ySi xSn y heterostructures on Si(100). The Ge 1-x.ySi xSn y system provides independent strain and bandgap engineering to achieve structures that may lead to novel photonic group-IV devices.

Original languageEnglish (US)
Title of host publication2004 1st IEEE International Conference on Group IV Photonics
Pages55-57
Number of pages3
StatePublished - Dec 1 2004
Event2004 1st IEEE International Conference on Group IV Photonics - Hong Kong, China, Hong Kong
Duration: Sep 29 2004Oct 1 2004

Publication series

Name2004 1st IEEE International Conference on Group IV Photonics

Other

Other2004 1st IEEE International Conference on Group IV Photonics
CountryHong Kong
CityHong Kong, China
Period9/29/0410/1/04

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Kouvetakis, J., Tolle, J., & Menendez, J. (2004). New IR semiconductors in the Si-Ge-Sn system. In 2004 1st IEEE International Conference on Group IV Photonics (pp. 55-57). [ThB2] (2004 1st IEEE International Conference on Group IV Photonics).