TY - GEN
T1 - New generation of predictive technology model for sub-45nm design exploration
AU - Zhao, Wei
AU - Cao, Yu
PY - 2006
Y1 - 2006
N2 - Predictive MOSFET model is critical for early circuit design research. To accurately predict the characteristics of nanoscale CMOS, emerging physical effects, such as process variations and physical correlations among model parameters, must be included. In addition, predictions across technology generations should be smooth to make continuous extrapolations. In this work, a new generation of predictive technology model (PTM) is developed to accomplish these goals. Based on physical models and early stage silicon data, PTM of bulk CMOS for 130nm to 32nm technology nodes is successfully generated. By tuning ten parameters, PTM can be easily customized to cover a wide range of process uncertainties. The accuracy of PTM predictions is comprehensively verified: for NMOS, the error of I/sub on/ is 2% and for PMOS, it is 5%. Furthermore, the new PTM correctly captures process sensitivities in the nanometer regime. A webpage has been established for the release of PTM (http://www.eas.asu.edu//spl sim/ptm).
AB - Predictive MOSFET model is critical for early circuit design research. To accurately predict the characteristics of nanoscale CMOS, emerging physical effects, such as process variations and physical correlations among model parameters, must be included. In addition, predictions across technology generations should be smooth to make continuous extrapolations. In this work, a new generation of predictive technology model (PTM) is developed to accomplish these goals. Based on physical models and early stage silicon data, PTM of bulk CMOS for 130nm to 32nm technology nodes is successfully generated. By tuning ten parameters, PTM can be easily customized to cover a wide range of process uncertainties. The accuracy of PTM predictions is comprehensively verified: for NMOS, the error of I/sub on/ is 2% and for PMOS, it is 5%. Furthermore, the new PTM correctly captures process sensitivities in the nanometer regime. A webpage has been established for the release of PTM (http://www.eas.asu.edu//spl sim/ptm).
UR - http://www.scopus.com/inward/record.url?scp=84886736952&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84886736952&partnerID=8YFLogxK
U2 - 10.1109/ISQED.2006.91
DO - 10.1109/ISQED.2006.91
M3 - Conference contribution
AN - SCOPUS:84886736952
SN - 0769525237
SN - 9780769525235
T3 - Proceedings - International Symposium on Quality Electronic Design, ISQED
SP - 585
EP - 590
BT - Proceedings - 7th International Symposium on Quality Electronic Design, ISQED 2006
T2 - 7th International Symposium on Quality Electronic Design, ISQED 2006
Y2 - 27 March 2006 through 29 March 2006
ER -