New generation of predictive technology model for sub-45 nm early design exploration

Wei Zhao, Yu Cao

Research output: Contribution to journalArticle

551 Citations (Scopus)

Abstract

A predictive MOSFET model is critical for early circuit design research. To accurately predict the characteristics of nanoscale CMOS, emerging physical effects, such as process variations and correlations among model parameters, must be included. In this paper, a new generation of predictive technology model (PTM) is developed to accomplish this goal. Based on physical models and early-stage silicon data, the PTM of bulk CMOS is successfully generated for 130- to 32-nm technology nodes, with an Leff of as low as 13 nm. The accuracy of PTM predictions is comprehensively verified: The error of Ion is below 10% for both n-channel MOS and p-channel MOS. By tuning only ten primary parameters, the PTM can be easily customized to cover a wide range of process uncertainties. Furthermore, the new PTM correctly captures process sensitivities in the nanometer regime, particularly the interactions among Leff, Vth, mobility, and saturation velocity. A website has been established for the release of PTM: http://www.eas.asu.edu/~ptm.

Original languageEnglish (US)
Pages (from-to)2816-2823
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume53
Issue number11
DOIs
StatePublished - Nov 2006

Fingerprint

CMOS
websites
Silicon
Websites
emerging
field effect transistors
Tuning
tuning
Ions
saturation
Networks (circuits)
sensitivity
silicon
predictions
ions
interactions
Uncertainty

Keywords

  • Mobility degradation
  • Predictive modeling
  • Process variation
  • Saturation velocity
  • Threshold voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

New generation of predictive technology model for sub-45 nm early design exploration. / Zhao, Wei; Cao, Yu.

In: IEEE Transactions on Electron Devices, Vol. 53, No. 11, 11.2006, p. 2816-2823.

Research output: Contribution to journalArticle

@article{40ae638664b24eff9a665fd01a698c2d,
title = "New generation of predictive technology model for sub-45 nm early design exploration",
abstract = "A predictive MOSFET model is critical for early circuit design research. To accurately predict the characteristics of nanoscale CMOS, emerging physical effects, such as process variations and correlations among model parameters, must be included. In this paper, a new generation of predictive technology model (PTM) is developed to accomplish this goal. Based on physical models and early-stage silicon data, the PTM of bulk CMOS is successfully generated for 130- to 32-nm technology nodes, with an Leff of as low as 13 nm. The accuracy of PTM predictions is comprehensively verified: The error of Ion is below 10{\%} for both n-channel MOS and p-channel MOS. By tuning only ten primary parameters, the PTM can be easily customized to cover a wide range of process uncertainties. Furthermore, the new PTM correctly captures process sensitivities in the nanometer regime, particularly the interactions among Leff, Vth, mobility, and saturation velocity. A website has been established for the release of PTM: http://www.eas.asu.edu/~ptm.",
keywords = "Mobility degradation, Predictive modeling, Process variation, Saturation velocity, Threshold voltage",
author = "Wei Zhao and Yu Cao",
year = "2006",
month = "11",
doi = "10.1109/TED.2006.884077",
language = "English (US)",
volume = "53",
pages = "2816--2823",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",

}

TY - JOUR

T1 - New generation of predictive technology model for sub-45 nm early design exploration

AU - Zhao, Wei

AU - Cao, Yu

PY - 2006/11

Y1 - 2006/11

N2 - A predictive MOSFET model is critical for early circuit design research. To accurately predict the characteristics of nanoscale CMOS, emerging physical effects, such as process variations and correlations among model parameters, must be included. In this paper, a new generation of predictive technology model (PTM) is developed to accomplish this goal. Based on physical models and early-stage silicon data, the PTM of bulk CMOS is successfully generated for 130- to 32-nm technology nodes, with an Leff of as low as 13 nm. The accuracy of PTM predictions is comprehensively verified: The error of Ion is below 10% for both n-channel MOS and p-channel MOS. By tuning only ten primary parameters, the PTM can be easily customized to cover a wide range of process uncertainties. Furthermore, the new PTM correctly captures process sensitivities in the nanometer regime, particularly the interactions among Leff, Vth, mobility, and saturation velocity. A website has been established for the release of PTM: http://www.eas.asu.edu/~ptm.

AB - A predictive MOSFET model is critical for early circuit design research. To accurately predict the characteristics of nanoscale CMOS, emerging physical effects, such as process variations and correlations among model parameters, must be included. In this paper, a new generation of predictive technology model (PTM) is developed to accomplish this goal. Based on physical models and early-stage silicon data, the PTM of bulk CMOS is successfully generated for 130- to 32-nm technology nodes, with an Leff of as low as 13 nm. The accuracy of PTM predictions is comprehensively verified: The error of Ion is below 10% for both n-channel MOS and p-channel MOS. By tuning only ten primary parameters, the PTM can be easily customized to cover a wide range of process uncertainties. Furthermore, the new PTM correctly captures process sensitivities in the nanometer regime, particularly the interactions among Leff, Vth, mobility, and saturation velocity. A website has been established for the release of PTM: http://www.eas.asu.edu/~ptm.

KW - Mobility degradation

KW - Predictive modeling

KW - Process variation

KW - Saturation velocity

KW - Threshold voltage

UR - http://www.scopus.com/inward/record.url?scp=33750600861&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750600861&partnerID=8YFLogxK

U2 - 10.1109/TED.2006.884077

DO - 10.1109/TED.2006.884077

M3 - Article

AN - SCOPUS:33750600861

VL - 53

SP - 2816

EP - 2823

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 11

ER -