New Ge-Sn materials with adjustable bandgaps and lattice constants

Matthew R. Bauer, John Tolle, Andrew Chizmeshya, S. Zollner, Jose Menendez, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The synthesis and optical properties of a new class of Si-based infrared semiconductors in the Ge 1-x Sn x system are described. Chemical methods based on deuterium-stabilized Sn hydrides and UHV-CVD were used to prepare a wide range of metastable compositions and structures directly on silicon. These materials exhibit high thermal stability, superior crystallinity, and unique crystallographic and optical properties, such as adjustable band gaps and lattice constants. These properties are characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction as well as infrared and Raman spectroscopies and spectroscopic ellipsometry. The films grow essentially strain free and display a strong compositional dependence of the band structure.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsB.D. Weaver, M.O. Manasreh, C. Jagadish, S. Zollner
Pages49-54
Number of pages6
Volume744
StatePublished - 2002
EventQuantum Confined Semiconductor Nanostructures - Boston MA, United States
Duration: Dec 2 2002Dec 5 2002

Other

OtherQuantum Confined Semiconductor Nanostructures
CountryUnited States
CityBoston MA
Period12/2/0212/5/02

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'New Ge-Sn materials with adjustable bandgaps and lattice constants'. Together they form a unique fingerprint.

  • Cite this

    Bauer, M. R., Tolle, J., Chizmeshya, A., Zollner, S., Menendez, J., & Kouvetakis, J. (2002). New Ge-Sn materials with adjustable bandgaps and lattice constants. In B. D. Weaver, M. O. Manasreh, C. Jagadish, & S. Zollner (Eds.), Materials Research Society Symposium - Proceedings (Vol. 744, pp. 49-54)