New classes of Si-based photonic materials and device architectures via designer molecular routes

Research output: Contribution to journalArticle

63 Scopus citations

Abstract

Ge/Sn-based group IV semiconductors with tunable band gaps across the wide IR range were synthesized using designer hydrides with tailored Si, Ge and Sn stoichiometries and structures. GeSn, SiGeSn, SiSn and SiGeSn/Ge heterostructures undergo indirect to direct band gap transitions via strain engineering and alloy composition tuning, providing the basis for integration of microelectronics with optical components into a single chip. SiGeSn systems also enable buffer layer technologies with unprecedented lattice and thermal matching capabilities for applications in monolithic integration of III-V semiconductors with Si electronics.

Original languageEnglish (US)
Pages (from-to)1649-1655
Number of pages7
JournalJournal of Materials Chemistry
Volume17
Issue number17
DOIs
StatePublished - May 1 2007

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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