New classes of Si-based photonic materials and device architectures via designer molecular routes

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

Ge/Sn-based group IV semiconductors with tunable band gaps across the wide IR range were synthesized using designer hydrides with tailored Si, Ge and Sn stoichiometries and structures. GeSn, SiGeSn, SiSn and SiGeSn/Ge heterostructures undergo indirect to direct band gap transitions via strain engineering and alloy composition tuning, providing the basis for integration of microelectronics with optical components into a single chip. SiGeSn systems also enable buffer layer technologies with unprecedented lattice and thermal matching capabilities for applications in monolithic integration of III-V semiconductors with Si electronics.

Original languageEnglish (US)
Pages (from-to)1649-1655
Number of pages7
JournalJournal of Materials Chemistry
Volume17
Issue number17
DOIs
StatePublished - 2007

Fingerprint

Photonics
Energy gap
routes
photonics
Buffer layers
Electron transitions
Hydrides
microelectronics
Microelectronics
Stoichiometry
hydrides
Heterojunctions
stoichiometry
Electronic equipment
Tuning
buffers
chips
tuning
engineering
Semiconductor materials

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Materials Chemistry
  • Materials Science(all)

Cite this

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abstract = "Ge/Sn-based group IV semiconductors with tunable band gaps across the wide IR range were synthesized using designer hydrides with tailored Si, Ge and Sn stoichiometries and structures. GeSn, SiGeSn, SiSn and SiGeSn/Ge heterostructures undergo indirect to direct band gap transitions via strain engineering and alloy composition tuning, providing the basis for integration of microelectronics with optical components into a single chip. SiGeSn systems also enable buffer layer technologies with unprecedented lattice and thermal matching capabilities for applications in monolithic integration of III-V semiconductors with Si electronics.",
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