Neutron irradiation induced degradation of the collector-emitter offset voltage in InP/InGaAs single heterojunction bipolar transistors

Alexei Shatalov, S. Subramanian, A. Dentai, S. Chadrasekhar, Stephen Goodnick

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

In this article, we report the results of our investigation of neutron irradiation effects on the collector-emitter offset voltage of InP/InGaAs single heterojunction bipolar transistors. We find that the offset voltage of these devices increases by more than 0.1 V for neutron doses ∼6 × 1014 cm-2. We present an analysis of the forward and inverse Gummel plots that clearly shows that the increase in offset voltage is caused by the degradation of the base-collector junction due to the neutron-induced displacement damage in the collector.

Original languageEnglish (US)
Pages (from-to)3765-3767
Number of pages3
JournalJournal of Applied Physics
Volume88
Issue number6
DOIs
StatePublished - Sep 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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