Negative Schottky barrier between titanium and n-type Si(0 0 1) for low-resistance ohmic contacts

M. Tao, D. Udeshi, S. Agarwal, E. Maldonado, W. P. Kirk

Research output: Contribution to journalArticle

52 Scopus citations

Abstract

A metal-semiconductor contact should have a negative Schottky barrier if the metal has a work function less than the electron affinity of the semiconductor. Such a contact would behave ohmically with a low internal resistance. In reality, the electronic states on the semiconductor surface pin the surface Fermi level and make almost all the metals to show a positive Schottky barrier. By eliminating surface states on Si(0 0 1) with a monolayer of selenium, ohmic contacts with a negative Schottky barrier are demonstrated between titanium and n-type Si(0 0 1). These contacts are found to be thermally stable up to 400 °C.

Original languageEnglish (US)
Pages (from-to)335-338
Number of pages4
JournalSolid-State Electronics
Volume48
Issue number2
DOIs
StatePublished - Feb 1 2004
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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