Negative resistance and galvanomagnetic effects of hot electrons in inhomogeneous bulk semiconductors

D. K. Ferry, H. Heinrich

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

In order to study the effect of inhomogeneities on the galvanomagnetic properties of bulk semiconductors, conduction in layered semiconductors has been studied. Layered structures are fabricated from 5 Ω-cm n-type germanium by sandblasting a disturbed layer on one surface. This structure gives samples that have a mobility inhomogeneity between the two layers. With applied magnetic and strong electric fields oriented in the plane of the layers and normal to each other, negative differential resistance and negative magnetoresistance can be observed.

Original languageEnglish (US)
Pages (from-to)561-562,IN3-IN4,563-565
JournalSolid State Electronics
Volume11
Issue number5
DOIs
StatePublished - May 1968

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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