Negative resistance and galvanomagnetic effects of hot electrons in inhomogeneous bulk semiconductors

D. K. Ferry, H. Heinrich

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In order to study the effect of inhomogeneities on the galvanomagnetic properties of bulk semiconductors, conduction in layered semiconductors has been studied. Layered structures are fabricated from 5 Ω-cm n-type germanium by sandblasting a disturbed layer on one surface. This structure gives samples that have a mobility inhomogeneity between the two layers. With applied magnetic and strong electric fields oriented in the plane of the layers and normal to each other, negative differential resistance and negative magnetoresistance can be observed.

Original languageEnglish (US)
JournalSolid State Electronics
Volume11
Issue number5
StatePublished - May 1968
Externally publishedYes

Fingerprint

galvanomagnetic effects
Germanium
Galvanomagnetic effects
Negative resistance
Hot electrons
Magnetoresistance
hot electrons
Electric fields
Semiconductor materials
inhomogeneity
germanium
conduction
electric fields
Layered semiconductors

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Negative resistance and galvanomagnetic effects of hot electrons in inhomogeneous bulk semiconductors. / Ferry, D. K.; Heinrich, H.

In: Solid State Electronics, Vol. 11, No. 5, 05.1968.

Research output: Contribution to journalArticle

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