Negative magnetoresistance and electron-electron interaction in Si:SiGe quantum wells

T. J. Thornton; A. Matsumura; J. Fernández

doi:10.1016/0039-6028(96)00466-9

Negative magnetoresistance and electron-electron interaction in Si:SiGe quantum wells

T. J. Thornton, A. Matsumura, J. Fernández

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We have measured the magnetoresistance of n-channel Si:SiGe quantum wells in the temperature range 0.4-6.6 K. For magnetic fields less than 1 T and before the onset of Shubnikov-de Haas oscillations, there is a broad negative magnetoresistance. The change in resistance follows a B² dependence and can be explained in terms of the 2D electron-electron interaction.

Original language	English (US)
Pages (from-to)	547-549
Number of pages	3
Journal	Surface Science
Volume	361-362
DOIs	https://doi.org/10.1016/0039-6028(96)00466-9
State	Published - Jul 20 1996
Externally published	Yes

Keywords

Electrical transport
Molecular beam epitaxy
Quantum wells
Silicon-germanium

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(96)00466-9

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title = "Negative magnetoresistance and electron-electron interaction in Si:SiGe quantum wells",

abstract = "We have measured the magnetoresistance of n-channel Si:SiGe quantum wells in the temperature range 0.4-6.6 K. For magnetic fields less than 1 T and before the onset of Shubnikov-de Haas oscillations, there is a broad negative magnetoresistance. The change in resistance follows a B2 dependence and can be explained in terms of the 2D electron-electron interaction.",

keywords = "Electrical transport, Molecular beam epitaxy, Quantum wells, Silicon-germanium",

author = "Thornton, {T. J.} and A. Matsumura and J. Fern{\'a}ndez",

note = "Funding Information: This work was supported in part by the EPSRC.",

year = "1996",

month = jul,

day = "20",

doi = "10.1016/0039-6028(96)00466-9",

language = "English (US)",

volume = "361-362",

pages = "547--549",

journal = "Surface Science",

issn = "0039-6028",

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TY - JOUR

T1 - Negative magnetoresistance and electron-electron interaction in Si:SiGe quantum wells

AU - Thornton, T. J.

AU - Matsumura, A.

AU - Fernández, J.

N1 - Funding Information: This work was supported in part by the EPSRC.

PY - 1996/7/20

Y1 - 1996/7/20

N2 - We have measured the magnetoresistance of n-channel Si:SiGe quantum wells in the temperature range 0.4-6.6 K. For magnetic fields less than 1 T and before the onset of Shubnikov-de Haas oscillations, there is a broad negative magnetoresistance. The change in resistance follows a B2 dependence and can be explained in terms of the 2D electron-electron interaction.

AB - We have measured the magnetoresistance of n-channel Si:SiGe quantum wells in the temperature range 0.4-6.6 K. For magnetic fields less than 1 T and before the onset of Shubnikov-de Haas oscillations, there is a broad negative magnetoresistance. The change in resistance follows a B2 dependence and can be explained in terms of the 2D electron-electron interaction.

KW - Electrical transport

KW - Molecular beam epitaxy

KW - Quantum wells

KW - Silicon-germanium

UR - http://www.scopus.com/inward/record.url?scp=0030196909&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030196909&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(96)00466-9

DO - 10.1016/0039-6028(96)00466-9

M3 - Article

AN - SCOPUS:0030196909

SN - 0039-6028

VL - 361-362

SP - 547

EP - 549

JO - Surface Science

JF - Surface Science

ER -

Negative magnetoresistance and electron-electron interaction in Si:SiGe quantum wells

Abstract

Keywords

ASJC Scopus subject areas

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