Negative magnetoresistance and electron-electron interaction in Si:SiGe quantum wells

T. J. Thornton, A. Matsumura, J. Fernández

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We have measured the magnetoresistance of n-channel Si:SiGe quantum wells in the temperature range 0.4-6.6 K. For magnetic fields less than 1 T and before the onset of Shubnikov-de Haas oscillations, there is a broad negative magnetoresistance. The change in resistance follows a B2 dependence and can be explained in terms of the 2D electron-electron interaction.

Original languageEnglish (US)
Pages (from-to)547-549
Number of pages3
JournalSurface Science
Volume361-362
DOIs
StatePublished - Jul 20 1996
Externally publishedYes

Keywords

  • Electrical transport
  • Molecular beam epitaxy
  • Quantum wells
  • Silicon-germanium

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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