Negative Differential Resistance in a Resonant Quantum Wire Structure

Andreas Weisshaar; Jenifer Lary; Stephen M. Goodnick; Vijai K. Tripathi

doi:10.1109/55.75678

Negative Differential Resistance in a Resonant Quantum Wire Structure

Andreas Weisshaar, Jenifer Lary, Stephen M. Goodnick, Vijai K. Tripathi

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

It is shown that the transmission characteristics of a semiconductor split-gate device with a double constriction exhibit resonant behavior similar to that in resonant-tunneling diodes (RTD’s). The double constriction is modeled with cascaded quantum waveguides of different widths, and analyzed by applying a mode-matching technique to the wave function at the discontinuities. At low temperature, the calculated current-voltage characteristics exhibit a region of negative differential resistance. Current-voltage characteristics are presented for different constriction widths and temperatures exhibiting peak-to-valley ratios of up to 4:1 which persist up to temperatures around 10 K.

Original language	English (US)
Pages (from-to)	2-4
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	1
DOIs	https://doi.org/10.1109/55.75678
State	Published - Jan 1991
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/55.75678

Fingerprint Dive into the research topics of 'Negative Differential Resistance in a Resonant Quantum Wire Structure'. Together they form a unique fingerprint.

Cite this

@article{e14e78be31fa4a9eb747a3c7900e37de,

title = "Negative Differential Resistance in a Resonant Quantum Wire Structure",

abstract = "It is shown that the transmission characteristics of a semiconductor split-gate device with a double constriction exhibit resonant behavior similar to that in resonant-tunneling diodes (RTD{\textquoteright}s). The double constriction is modeled with cascaded quantum waveguides of different widths, and analyzed by applying a mode-matching technique to the wave function at the discontinuities. At low temperature, the calculated current-voltage characteristics exhibit a region of negative differential resistance. Current-voltage characteristics are presented for different constriction widths and temperatures exhibiting peak-to-valley ratios of up to 4:1 which persist up to temperatures around 10 K.",

author = "Andreas Weisshaar and Jenifer Lary and Goodnick, {Stephen M.} and Tripathi, {Vijai K.}",

note = "Funding Information: Manuscript received July 26, 1990. This work was supported in part by the U.S. Office of Naval Research under Contract N00014-89-J-1894 and Tektronix, Inc., Beaverton, OR. J. Lary was supported by IBM Corporation, Essex Junction, VT. The authors are with the Department of Electrical and Computer Engi-neering, Oregon State University, Corvallis, OR 97331. IEEE Log Number 9041429.",

year = "1991",

month = jan,

doi = "10.1109/55.75678",

language = "English (US)",

volume = "12",

pages = "2--4",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Negative Differential Resistance in a Resonant Quantum Wire Structure

AU - Weisshaar, Andreas

AU - Lary, Jenifer

AU - Goodnick, Stephen M.

AU - Tripathi, Vijai K.

N1 - Funding Information: Manuscript received July 26, 1990. This work was supported in part by the U.S. Office of Naval Research under Contract N00014-89-J-1894 and Tektronix, Inc., Beaverton, OR. J. Lary was supported by IBM Corporation, Essex Junction, VT. The authors are with the Department of Electrical and Computer Engi-neering, Oregon State University, Corvallis, OR 97331. IEEE Log Number 9041429.

PY - 1991/1

Y1 - 1991/1

N2 - It is shown that the transmission characteristics of a semiconductor split-gate device with a double constriction exhibit resonant behavior similar to that in resonant-tunneling diodes (RTD’s). The double constriction is modeled with cascaded quantum waveguides of different widths, and analyzed by applying a mode-matching technique to the wave function at the discontinuities. At low temperature, the calculated current-voltage characteristics exhibit a region of negative differential resistance. Current-voltage characteristics are presented for different constriction widths and temperatures exhibiting peak-to-valley ratios of up to 4:1 which persist up to temperatures around 10 K.

AB - It is shown that the transmission characteristics of a semiconductor split-gate device with a double constriction exhibit resonant behavior similar to that in resonant-tunneling diodes (RTD’s). The double constriction is modeled with cascaded quantum waveguides of different widths, and analyzed by applying a mode-matching technique to the wave function at the discontinuities. At low temperature, the calculated current-voltage characteristics exhibit a region of negative differential resistance. Current-voltage characteristics are presented for different constriction widths and temperatures exhibiting peak-to-valley ratios of up to 4:1 which persist up to temperatures around 10 K.

UR - http://www.scopus.com/inward/record.url?scp=0025956216&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025956216&partnerID=8YFLogxK

U2 - 10.1109/55.75678

DO - 10.1109/55.75678

M3 - Article

AN - SCOPUS:0025956216

VL - 12

SP - 2

EP - 4

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 1

ER -

Negative Differential Resistance in a Resonant Quantum Wire Structure

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this