Negative Differential Resistance in a Resonant Quantum Wire Structure

Andreas Weisshaar, Jenifer Lary, Stephen M. Goodnick, Vijai K. Tripathi

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

It is shown that the transmission characteristics of a semiconductor split-gate device with a double constriction exhibit resonant behavior similar to that in resonant-tunneling diodes (RTD’s). The double constriction is modeled with cascaded quantum waveguides of different widths, and analyzed by applying a mode-matching technique to the wave function at the discontinuities. At low temperature, the calculated current-voltage characteristics exhibit a region of negative differential resistance. Current-voltage characteristics are presented for different constriction widths and temperatures exhibiting peak-to-valley ratios of up to 4:1 which persist up to temperatures around 10 K.

Original languageEnglish (US)
Pages (from-to)2-4
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number1
DOIs
StatePublished - Jan 1991
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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