Negative Differential Resistance in a Resonant Quantum Wire Structure

Andreas Weisshaar; Jenifer Lary; Stephen M. Goodnick; Vijai K. Tripathi

doi:10.1109/55.75678

Negative Differential Resistance in a Resonant Quantum Wire Structure

Andreas Weisshaar, Jenifer Lary, Stephen M. Goodnick, Vijai K. Tripathi

Research output: Contribution to journal › Article

12 Scopus citations

Abstract

It is shown that the transmission characteristics of a semiconductor split-gate device with a double constriction exhibit resonant behavior similar to that in resonant-tunneling diodes (RTD’s). The double constriction is modeled with cascaded quantum waveguides of different widths, and analyzed by applying a mode-matching technique to the wave function at the discontinuities. At low temperature, the calculated current-voltage characteristics exhibit a region of negative differential resistance. Current-voltage characteristics are presented for different constriction widths and temperatures exhibiting peak-to-valley ratios of up to 4:1 which persist up to temperatures around 10 K.

Original language	English (US)
Pages (from-to)	2-4
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	1
DOIs	https://doi.org/10.1109/55.75678
State	Published - Jan 1991
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Weisshaar, A., Lary, J., Goodnick, S. M., & Tripathi, V. K. (1991). Negative Differential Resistance in a Resonant Quantum Wire Structure. IEEE Electron Device Letters, 12(1), 2-4. https://doi.org/10.1109/55.75678

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