Negative differential resistance in a bilayer molecular junction

J. Le, Yan He, C. Mead, T. R. Hoye, Richard Kiehl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we report negative differential resistance in a bilayer molecular junction. The molecular junctions were formed by contacting an amino nitro benezenethiol self-assembled monolayer (SAM) supported by an gold film with a second SAM comprised of alkanethiol molecules supported on the surface of mercury drop.

Original languageEnglish (US)
Title of host publicationDevice Research Conference - Conference Digest, DRC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages175-176
Number of pages2
Volume2003-January
ISBN (Print)0780377273
DOIs
StatePublished - 2003
Externally publishedYes
Event61st Device Research Conference, DRC 2003 - Salt Lake City, United States
Duration: Jun 23 2003Jun 25 2003

Other

Other61st Device Research Conference, DRC 2003
CountryUnited States
CitySalt Lake City
Period6/23/036/25/03

Keywords

  • Electric resistance
  • Gold
  • Helium
  • Mercury (metals)
  • Semiconductor films
  • Silicon
  • Substrates
  • Temperature
  • Tunneling
  • Voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Le, J., He, Y., Mead, C., Hoye, T. R., & Kiehl, R. (2003). Negative differential resistance in a bilayer molecular junction. In Device Research Conference - Conference Digest, DRC (Vol. 2003-January, pp. 175-176). [1226921] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2003.1226921