Negative differential conductance observed in a lateral double constriction device

J. C. Wu, M. N. Wybourne, C. Berven, Stephen Goodnick, Doran D. Smith

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Lateral double point contact devices were fabricated using a split-gate high electron mobility transistor. The low-temperature source-drain characteristics show pronounced S-shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.

Original languageEnglish (US)
Pages (from-to)2425-2427
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number20
DOIs
StatePublished - 1992
Externally publishedYes

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constrictions
high electron mobility transistors
hot electrons
diodes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Negative differential conductance observed in a lateral double constriction device. / Wu, J. C.; Wybourne, M. N.; Berven, C.; Goodnick, Stephen; Smith, Doran D.

In: Applied Physics Letters, Vol. 61, No. 20, 1992, p. 2425-2427.

Research output: Contribution to journalArticle

Wu, J. C. ; Wybourne, M. N. ; Berven, C. ; Goodnick, Stephen ; Smith, Doran D. / Negative differential conductance observed in a lateral double constriction device. In: Applied Physics Letters. 1992 ; Vol. 61, No. 20. pp. 2425-2427.
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