Negative differential conductance in a lateral hot-electron device

J. C. Wu; M. N. Wybourne; C. Berven; S. M. Goodnick; D. D. Smith

doi:10.1088/0268-1242/9/5S/140

Negative differential conductance in a lateral hot-electron device

J. C. Wu, M. N. Wybourne, C. Berven, S. M. Goodnick, D. D. Smith

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the observations of S-type negative differential conductance in the current-voltage characteristics of a pinched cavity quantum dot structure. An energy balance approach is used to explain the existence of bistable current-voltage characteristics due to thermal runaway of the hot carriers in the dot structure. This runaway is shown to arise from heating of carriers in the quantum dot by incident electrons injected over the barrier of the input constriction. The observed S-type negative differential conductance is controlled by a third-terminal gate bias, and may be turned on or off depending on the bias voltage. Thus the effect may be utilized to realize a multiterminal switching device.

Original language	English (US)
Article number	140
Pages (from-to)	922-925
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	9
Issue number	5 S
DOIs	https://doi.org/10.1088/0268-1242/9/5S/140
State	Published - Dec 1 1994
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/9/5S/140

Cite this

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title = "Negative differential conductance in a lateral hot-electron device",

abstract = "We report on the observations of S-type negative differential conductance in the current-voltage characteristics of a pinched cavity quantum dot structure. An energy balance approach is used to explain the existence of bistable current-voltage characteristics due to thermal runaway of the hot carriers in the dot structure. This runaway is shown to arise from heating of carriers in the quantum dot by incident electrons injected over the barrier of the input constriction. The observed S-type negative differential conductance is controlled by a third-terminal gate bias, and may be turned on or off depending on the bias voltage. Thus the effect may be utilized to realize a multiterminal switching device.",

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AU - Wu, J. C.

AU - Wybourne, M. N.

AU - Berven, C.

AU - Goodnick, S. M.

AU - Smith, D. D.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We report on the observations of S-type negative differential conductance in the current-voltage characteristics of a pinched cavity quantum dot structure. An energy balance approach is used to explain the existence of bistable current-voltage characteristics due to thermal runaway of the hot carriers in the dot structure. This runaway is shown to arise from heating of carriers in the quantum dot by incident electrons injected over the barrier of the input constriction. The observed S-type negative differential conductance is controlled by a third-terminal gate bias, and may be turned on or off depending on the bias voltage. Thus the effect may be utilized to realize a multiterminal switching device.

AB - We report on the observations of S-type negative differential conductance in the current-voltage characteristics of a pinched cavity quantum dot structure. An energy balance approach is used to explain the existence of bistable current-voltage characteristics due to thermal runaway of the hot carriers in the dot structure. This runaway is shown to arise from heating of carriers in the quantum dot by incident electrons injected over the barrier of the input constriction. The observed S-type negative differential conductance is controlled by a third-terminal gate bias, and may be turned on or off depending on the bias voltage. Thus the effect may be utilized to realize a multiterminal switching device.

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JO - Semiconductor Science and Technology

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Negative differential conductance in a lateral hot-electron device

Abstract

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