Near IR photodiodes with tunable absorption edge based on Ge 1-ySny alloys integrated on silicon

J. Mathews; R. Roucka; C. Weng; R. Beeler; J. Tolle; Jose Menendez; John Kouvetakis

doi:10.1149/1.3487607

Near IR photodiodes with tunable absorption edge based on Ge _1-ySn_y alloys integrated on silicon

J. Mathews, R. Roucka, C. Weng, R. Beeler, J. Tolle, Jose Menendez, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

18 Scopus citations

Abstract

Ge_1-ySn_y materials represent a viable path to silicon-based electronic devices for optical communications. In this paper, we present the results of heterostructure photodiodes fabricated from Ge _0.99Sn_0.01 films grown on Si(100) substrates. The results are compared with those of similarly fabricated devices from pure Ge and Ge _0.98Sn_0.02 to demonstrate the tunability of device response through precise control of material composition.

Original language	English (US)
Title of host publication	SiGe, Ge, and Related Compounds 4
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	765-773
Number of pages	9
Edition	6
ISBN (Electronic)	9781607681755
ISBN (Print)	9781566778251
DOIs	https://doi.org/10.1149/1.3487607
State	Published - 2010

Publication series

Name	ECS Transactions
Number	6
Volume	33
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/1.3487607

Cite this

Mathews, J., Roucka, R., Weng, C., Beeler, R., Tolle, J., Menendez, J., & Kouvetakis, J. (2010). Near IR photodiodes with tunable absorption edge based on Ge _1-ySn_y alloys integrated on silicon. In SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices (6 ed., pp. 765-773). (ECS Transactions; Vol. 33, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/1.3487607

Near IR photodiodes with tunable absorption edge based on Ge _1-ySn_y alloys integrated on silicon. / Mathews, J.; Roucka, R.; Weng, C. et al.
SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6. ed. Electrochemical Society Inc., 2010. p. 765-773 (ECS Transactions; Vol. 33, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mathews, J, Roucka, R, Weng, C, Beeler, R, Tolle, J, Menendez, J & Kouvetakis, J 2010, Near IR photodiodes with tunable absorption edge based on Ge _1-ySn_y alloys integrated on silicon. in SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6 edn, ECS Transactions, no. 6, vol. 33, Electrochemical Society Inc., pp. 765-773. https://doi.org/10.1149/1.3487607

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