Near IR photodiodes with tunable absorption edge based on Ge 1-ySny alloys integrated on silicon

J. Mathews, R. Roucka, C. Weng, R. Beeler, J. Tolle, Jose Menendez, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations

Abstract

Ge1-ySny materials represent a viable path to silicon-based electronic devices for optical communications. In this paper, we present the results of heterostructure photodiodes fabricated from Ge 0.99Sn0.01 films grown on Si(100) substrates. The results are compared with those of similarly fabricated devices from pure Ge and Ge 0.98Sn0.02 to demonstrate the tunability of device response through precise control of material composition.

Original languageEnglish (US)
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
PublisherElectrochemical Society Inc.
Pages765-773
Number of pages9
Edition6
ISBN (Electronic)9781607681755
ISBN (Print)9781566778251
DOIs
StatePublished - 2010

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • Engineering(all)

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