Ge1-ySny materials represent a viable path to silicon-based electronic devices for optical communications. In this paper, we present the results of heterostructure photodiodes fabricated from Ge 0.99Sn0.01 films grown on Si(100) substrates. The results are compared with those of similarly fabricated devices from pure Ge and Ge 0.98Sn0.02 to demonstrate the tunability of device response through precise control of material composition.
|Original language||English (US)|
|Title of host publication||SiGe, Ge, and Related Compounds 4|
|Subtitle of host publication||Materials, Processing, and Devices|
|Publisher||Electrochemical Society Inc.|
|Number of pages||9|
|State||Published - 2010|
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