Near-infrared semiconductor subwavelength-wire lasers

A. H. Chin; S. Vaddiraju; A. V. Maslov; C. Z. Ning; M. K. Sunkara; M. Meyyappan

doi:10.1063/1.2198017

Near-infrared semiconductor subwavelength-wire lasers

A. H. Chin, S. Vaddiraju, A. V. Maslov, C. Z. Ning, M. K. Sunkara, M. Meyyappan

Research output: Contribution to journal › Article

124 Scopus citations

Abstract

We report near-infrared lasing in the telecommunications band in gallium antimonide semiconductor subwavelength wires. Our results open the possibility of the use of semiconductor subwavelength-wire lasers in future photonic integrated circuits for telecommunications applications.

Original language	English (US)
Article number	163115
Journal	Applied Physics Letters
Volume	88
Issue number	16
DOIs	https://doi.org/10.1063/1.2198017
State	Published - Apr 17 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2198017

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Chin, A. H., Vaddiraju, S., Maslov, A. V., Ning, C. Z., Sunkara, M. K., & Meyyappan, M. (2006). Near-infrared semiconductor subwavelength-wire lasers. Applied Physics Letters, 88(16), [163115]. https://doi.org/10.1063/1.2198017

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abstract = "We report near-infrared lasing in the telecommunications band in gallium antimonide semiconductor subwavelength wires. Our results open the possibility of the use of semiconductor subwavelength-wire lasers in future photonic integrated circuits for telecommunications applications.",

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AU - Meyyappan, M.

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