Near-infrared laser pumped intersubband THz laser gain in InGaAs-AlAsSb-InP quantum wells

Ansheng Liu; C. Z. Ning

doi:10.1063/1.126230

Near-infrared laser pumped intersubband THz laser gain in InGaAs-AlAsSb-InP quantum wells

Ansheng Liu, C. Z. Ning

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We investigate the possibility of using InGaAs-AlAsSb-InP coupled quantum wells to generate THz radiation by means of intersubband optical pumping. We show that large conduction band offsets of these quantum wells make it possible to use conventional near-infrared diode lasers around 1.55 μm as pump sources. Taking into account the pump-probe coherent interaction and the optical nonlinearity for the pump field, we calculate the THz gain of the quantum well structure. We show that resonant Raman scattering enhances the THz gain at low and moderate optical pumping levels. When the pump intensity is strong, the THz gain is reduced by pump-induced population redistribution and pump-probe coherent interactions.

Original language	English (US)
Pages (from-to)	1984-1986
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	15
DOIs	https://doi.org/10.1063/1.126230
State	Published - Apr 10 2000
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.126230

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title = "Near-infrared laser pumped intersubband THz laser gain in InGaAs-AlAsSb-InP quantum wells",

abstract = "We investigate the possibility of using InGaAs-AlAsSb-InP coupled quantum wells to generate THz radiation by means of intersubband optical pumping. We show that large conduction band offsets of these quantum wells make it possible to use conventional near-infrared diode lasers around 1.55 μm as pump sources. Taking into account the pump-probe coherent interaction and the optical nonlinearity for the pump field, we calculate the THz gain of the quantum well structure. We show that resonant Raman scattering enhances the THz gain at low and moderate optical pumping levels. When the pump intensity is strong, the THz gain is reduced by pump-induced population redistribution and pump-probe coherent interactions.",

author = "Ansheng Liu and Ning, {C. Z.}",

year = "2000",

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AU - Liu, Ansheng

AU - Ning, C. Z.

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Y1 - 2000/4/10

N2 - We investigate the possibility of using InGaAs-AlAsSb-InP coupled quantum wells to generate THz radiation by means of intersubband optical pumping. We show that large conduction band offsets of these quantum wells make it possible to use conventional near-infrared diode lasers around 1.55 μm as pump sources. Taking into account the pump-probe coherent interaction and the optical nonlinearity for the pump field, we calculate the THz gain of the quantum well structure. We show that resonant Raman scattering enhances the THz gain at low and moderate optical pumping levels. When the pump intensity is strong, the THz gain is reduced by pump-induced population redistribution and pump-probe coherent interactions.

AB - We investigate the possibility of using InGaAs-AlAsSb-InP coupled quantum wells to generate THz radiation by means of intersubband optical pumping. We show that large conduction band offsets of these quantum wells make it possible to use conventional near-infrared diode lasers around 1.55 μm as pump sources. Taking into account the pump-probe coherent interaction and the optical nonlinearity for the pump field, we calculate the THz gain of the quantum well structure. We show that resonant Raman scattering enhances the THz gain at low and moderate optical pumping levels. When the pump intensity is strong, the THz gain is reduced by pump-induced population redistribution and pump-probe coherent interactions.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Near-infrared laser pumped intersubband THz laser gain in InGaAs-AlAsSb-InP quantum wells

Abstract

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