Near infrared intersubband transitions in delta-doped InAs/AlSb multi-quantum wells

M. Nakai, S. Sasa, Y. Nakajima, M. Furukawa, M. Inoue, D. C. Larrabee, J. Kono, J. Li, Cun-Zheng Ning

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Recently, the development of a compact light source operating in terahertz (THz) frequency range has attracted great amount of interest. Our goal is to realize all optical light sources pumped by a compact near infrared diode laser. For this purpose, we investigate intersubband transitions (ISBTs) in InAs/AlSb multiple quantum wells (MQWs). The family of semiconductors with a lattice constant of around 6.1 Å (InAs, AlSb, and GaSb) has several advantageous features such as the large conduction band discontinuity of about 2.1 eV and small effective mass in InAs leading to strong ISBTs. Previously, we studied the ISBTs in unintentionally doped InAs/AlSb for relatively wide wells and reported that no ISBTs were observed for well width less than 5 nm. Ohtani et al. reported ISBTs can be observed in narrower (2.7 nm) InAs/AlSb MQWs. In order to observe ISBTs in near infrared region, we investigate heavily doped InAs/AlSb MQWs with the well width, d, less than 5 nm.

Original languageEnglish (US)
Title of host publicationIMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages65-66
Number of pages2
ISBN (Print)0780384237, 9780780384231
DOIs
Publication statusPublished - 2004
Externally publishedYes
Event2nd International Meeting for Future of Electron Devices, Kansai, IMFEDK 2004 - Kyoto, Japan
Duration: Jul 26 2004Jul 28 2004

Other

Other2nd International Meeting for Future of Electron Devices, Kansai, IMFEDK 2004
CountryJapan
CityKyoto
Period7/26/047/28/04

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Nakai, M., Sasa, S., Nakajima, Y., Furukawa, M., Inoue, M., Larrabee, D. C., ... Ning, C-Z. (2004). Near infrared intersubband transitions in delta-doped InAs/AlSb multi-quantum wells. In IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai (pp. 65-66). [1566410] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMFEDK.2004.1566410