Near infrared intersubband transitions in delta-doped InAs/AlSb multi-quantum wells

M. Nakai; S. Sasa; Y. Nakajima; M. Furukawa; M. Inoue; D. C. Larrabee; J. Kono; J. Li; Cun-Zheng Ning

doi:10.1109/IMFEDK.2004.1566410

Near infrared intersubband transitions in delta-doped InAs/AlSb multi-quantum wells

M. Nakai, S. Sasa, Y. Nakajima, M. Furukawa, M. Inoue, D. C. Larrabee, J. Kono, J. Li, Cun-Zheng Ning

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Recently, the development of a compact light source operating in terahertz (THz) frequency range has attracted great amount of interest. Our goal is to realize all optical light sources pumped by a compact near infrared diode laser. For this purpose, we investigate intersubband transitions (ISBTs) in InAs/AlSb multiple quantum wells (MQWs). The family of semiconductors with a lattice constant of around 6.1 Å (InAs, AlSb, and GaSb) has several advantageous features such as the large conduction band discontinuity of about 2.1 eV and small effective mass in InAs leading to strong ISBTs. Previously, we studied the ISBTs in unintentionally doped InAs/AlSb for relatively wide wells and reported that no ISBTs were observed for well width less than 5 nm. Ohtani et al. reported ISBTs can be observed in narrower (2.7 nm) InAs/AlSb MQWs. In order to observe ISBTs in near infrared region, we investigate heavily doped InAs/AlSb MQWs with the well width, d, less than 5 nm.

Original language	English (US)
Title of host publication	IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	65-66
Number of pages	2
ISBN (Print)	0780384237, 9780780384231
DOIs	https://doi.org/10.1109/IMFEDK.2004.1566410
State	Published - 2004
Externally published	Yes
Event	2nd International Meeting for Future of Electron Devices, Kansai, IMFEDK 2004 - Kyoto, Japan Duration: Jul 26 2004 → Jul 28 2004

Other

Other	2nd International Meeting for Future of Electron Devices, Kansai, IMFEDK 2004
Country/Territory	Japan
City	Kyoto
Period	7/26/04 → 7/28/04

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IMFEDK.2004.1566410

Cite this

Nakai, M., Sasa, S., Nakajima, Y., Furukawa, M., Inoue, M., Larrabee, D. C., Kono, J., Li, J., & Ning, C-Z. (2004). Near infrared intersubband transitions in delta-doped InAs/AlSb multi-quantum wells. In IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai (pp. 65-66). [1566410] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMFEDK.2004.1566410

Near infrared intersubband transitions in delta-doped InAs/AlSb multi-quantum wells. / Nakai, M.; Sasa, S.; Nakajima, Y. et al.

IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc., 2004. p. 65-66 1566410.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakai, M, Sasa, S, Nakajima, Y, Furukawa, M, Inoue, M, Larrabee, DC, Kono, J, Li, J & Ning, C-Z 2004, Near infrared intersubband transitions in delta-doped InAs/AlSb multi-quantum wells. in IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai., 1566410, Institute of Electrical and Electronics Engineers Inc., pp. 65-66, 2nd International Meeting for Future of Electron Devices, Kansai, IMFEDK 2004, Kyoto, Japan, 7/26/04. https://doi.org/10.1109/IMFEDK.2004.1566410

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abstract = "Recently, the development of a compact light source operating in terahertz (THz) frequency range has attracted great amount of interest. Our goal is to realize all optical light sources pumped by a compact near infrared diode laser. For this purpose, we investigate intersubband transitions (ISBTs) in InAs/AlSb multiple quantum wells (MQWs). The family of semiconductors with a lattice constant of around 6.1 {\AA} (InAs, AlSb, and GaSb) has several advantageous features such as the large conduction band discontinuity of about 2.1 eV and small effective mass in InAs leading to strong ISBTs. Previously, we studied the ISBTs in unintentionally doped InAs/AlSb for relatively wide wells and reported that no ISBTs were observed for well width less than 5 nm. Ohtani et al. reported ISBTs can be observed in narrower (2.7 nm) InAs/AlSb MQWs. In order to observe ISBTs in near infrared region, we investigate heavily doped InAs/AlSb MQWs with the well width, d, less than 5 nm.",

author = "M. Nakai and S. Sasa and Y. Nakajima and M. Furukawa and M. Inoue and Larrabee, {D. C.} and J. Kono and J. Li and Cun-Zheng Ning",

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AU - Inoue, M.

AU - Larrabee, D. C.

AU - Kono, J.

AU - Li, J.

AU - Ning, Cun-Zheng

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AB - Recently, the development of a compact light source operating in terahertz (THz) frequency range has attracted great amount of interest. Our goal is to realize all optical light sources pumped by a compact near infrared diode laser. For this purpose, we investigate intersubband transitions (ISBTs) in InAs/AlSb multiple quantum wells (MQWs). The family of semiconductors with a lattice constant of around 6.1 Å (InAs, AlSb, and GaSb) has several advantageous features such as the large conduction band discontinuity of about 2.1 eV and small effective mass in InAs leading to strong ISBTs. Previously, we studied the ISBTs in unintentionally doped InAs/AlSb for relatively wide wells and reported that no ISBTs were observed for well width less than 5 nm. Ohtani et al. reported ISBTs can be observed in narrower (2.7 nm) InAs/AlSb MQWs. In order to observe ISBTs in near infrared region, we investigate heavily doped InAs/AlSb MQWs with the well width, d, less than 5 nm.

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Near infrared intersubband transitions in delta-doped InAs/AlSb multi-quantum wells

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