Nature of interface defect buildup in gated bipolar devices under low dose rate irradiation

X. J. Chen; Hugh Barnaby; R. D. Schrimpf; D. M. Fleetwood; R. L. Pease; D. G. Platteter; G. W. Dunham

doi:10.1109/TNS.2006.885375

Nature of interface defect buildup in gated bipolar devices under low dose rate irradiation

X. J. Chen, Hugh Barnaby, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, D. G. Platteter, G. W. Dunham

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

The buildup of radiation-induced switching states in ELDRS-sensitive bipolar base oxides is measured with dc current-voltage and charge pumping techniques. These states include both faster interface traps (P_b) centers) and slower border traps. After irradiation, border traps and interface traps mostly decrease with annealing time and temperature in devices irradiated at 0 V. However, for devices irradiated at -50 V, there is a decrease in border trap density but an increase in interface trap density. These differences in interface-trap buildup and annealing are attributed to the dependence of defect passivation and depassivation on the concentrations of hydrogen and dangling Si bond defects near the Si/SiO₂ interface.

Original language	English (US)
Pages (from-to)	3649-3654
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	53
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2006.885375
State	Published - Dec 2006

Keywords

Bipolar junction transistors
Border traps
Charge pumping
ELDRS
Interface traps

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TNS.2006.885375

Cite this

@article{1ea2ec2c2cbd465ba560c2222289942b,

title = "Nature of interface defect buildup in gated bipolar devices under low dose rate irradiation",

abstract = "The buildup of radiation-induced switching states in ELDRS-sensitive bipolar base oxides is measured with dc current-voltage and charge pumping techniques. These states include both faster interface traps (Pb) centers) and slower border traps. After irradiation, border traps and interface traps mostly decrease with annealing time and temperature in devices irradiated at 0 V. However, for devices irradiated at -50 V, there is a decrease in border trap density but an increase in interface trap density. These differences in interface-trap buildup and annealing are attributed to the dependence of defect passivation and depassivation on the concentrations of hydrogen and dangling Si bond defects near the Si/SiO2 interface.",

keywords = "Bipolar junction transistors, Border traps, Charge pumping, ELDRS, Interface traps",

author = "Chen, {X. J.} and Hugh Barnaby and Schrimpf, {R. D.} and Fleetwood, {D. M.} and Pease, {R. L.} and Platteter, {D. G.} and Dunham, {G. W.}",

note = "Funding Information: Manuscript received July 14, 2006; revised September 20, 2006. This work was supported by the Defense Threat Reduction Agency and AFOSR MURI. X. J. Chen and H. J. Barnaby are with Arizona State University, Tempe, AZ 85287 USA. R. D. Schrimpf and D. M. Fleetwood are with Vanderbilt University, Nashville, TN 37232 USA. R. L. Pease is with RLP Research, Los Lunas, NM 87031 USA. D. G. Platteter and G. W. Dunham are with NAVESEA Crane, Crane, IN 47522 USA. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2006.885375",

year = "2006",

month = dec,

doi = "10.1109/TNS.2006.885375",

language = "English (US)",

volume = "53",

pages = "3649--3654",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Nature of interface defect buildup in gated bipolar devices under low dose rate irradiation

AU - Chen, X. J.

AU - Barnaby, Hugh

AU - Schrimpf, R. D.

AU - Fleetwood, D. M.

AU - Pease, R. L.

AU - Platteter, D. G.

AU - Dunham, G. W.

N1 - Funding Information: Manuscript received July 14, 2006; revised September 20, 2006. This work was supported by the Defense Threat Reduction Agency and AFOSR MURI. X. J. Chen and H. J. Barnaby are with Arizona State University, Tempe, AZ 85287 USA. R. D. Schrimpf and D. M. Fleetwood are with Vanderbilt University, Nashville, TN 37232 USA. R. L. Pease is with RLP Research, Los Lunas, NM 87031 USA. D. G. Platteter and G. W. Dunham are with NAVESEA Crane, Crane, IN 47522 USA. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2006.885375

PY - 2006/12

Y1 - 2006/12

N2 - The buildup of radiation-induced switching states in ELDRS-sensitive bipolar base oxides is measured with dc current-voltage and charge pumping techniques. These states include both faster interface traps (Pb) centers) and slower border traps. After irradiation, border traps and interface traps mostly decrease with annealing time and temperature in devices irradiated at 0 V. However, for devices irradiated at -50 V, there is a decrease in border trap density but an increase in interface trap density. These differences in interface-trap buildup and annealing are attributed to the dependence of defect passivation and depassivation on the concentrations of hydrogen and dangling Si bond defects near the Si/SiO2 interface.

AB - The buildup of radiation-induced switching states in ELDRS-sensitive bipolar base oxides is measured with dc current-voltage and charge pumping techniques. These states include both faster interface traps (Pb) centers) and slower border traps. After irradiation, border traps and interface traps mostly decrease with annealing time and temperature in devices irradiated at 0 V. However, for devices irradiated at -50 V, there is a decrease in border trap density but an increase in interface trap density. These differences in interface-trap buildup and annealing are attributed to the dependence of defect passivation and depassivation on the concentrations of hydrogen and dangling Si bond defects near the Si/SiO2 interface.

KW - Bipolar junction transistors

KW - Border traps

KW - Charge pumping

KW - ELDRS

KW - Interface traps

UR - http://www.scopus.com/inward/record.url?scp=33846320426&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846320426&partnerID=8YFLogxK

U2 - 10.1109/TNS.2006.885375

DO - 10.1109/TNS.2006.885375

M3 - Article

AN - SCOPUS:33846320426

SN - 0018-9499

VL - 53

SP - 3649

EP - 3654

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

ER -

Nature of interface defect buildup in gated bipolar devices under low dose rate irradiation

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this