@inproceedings{a60a4eb8dc5744adb2472851b39d78a0,
title = "Narrow-width SOI devices the role of quantum mechanical space-quantization effects on device performance",
abstract = "We investigate the role of quantum mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement gives rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in the channel region. This, in turn, results not only in a significant increase in the threshold voltage but also in pronounced channel width dependency of the drain current. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum mechanical space-quantization effects have been accounted for via an effective potential scheme that has been quite successful in describing bandgap widening effect and charge set back from the interface.",
keywords = "CMOS process, CMOS technology, Carrier confinement, Degradation, Fabrication, Leakage current, MOSFET circuits, Silicon on insulator technology, Solid state circuits, Threshold voltage",
author = "Ahmed, {S. S.} and Dragica Vasileska",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002 ; Conference date: 26-08-2002 Through 28-08-2002",
year = "2002",
doi = "10.1109/NANO.2002.1032238",
language = "English (US)",
series = "Proceedings of the IEEE Conference on Nanotechnology",
publisher = "IEEE Computer Society",
pages = "243--246",
booktitle = "Proceedings of the 2002 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002",
}