Abstract
We investigate the role of quantum mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement gives rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in the channel region. This, in turn, results not only in a significant increase in the threshold voltage but also in pronounced channel width dependency of the drain current. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum mechanical space-quantization effects have been accounted for via an effective potential scheme that has been quite successful in describing bandgap widening effect and charge set back from the interface.
Original language | English (US) |
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Title of host publication | Proceedings of the IEEE Conference on Nanotechnology |
Publisher | IEEE Computer Society |
Pages | 243-246 |
Number of pages | 4 |
Volume | 2002-January |
ISBN (Print) | 0780375386 |
DOIs | |
State | Published - 2002 |
Event | 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002 - Washington, United States Duration: Aug 26 2002 → Aug 28 2002 |
Other
Other | 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002 |
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Country | United States |
City | Washington |
Period | 8/26/02 → 8/28/02 |
Keywords
- Carrier confinement
- CMOS process
- CMOS technology
- Degradation
- Fabrication
- Leakage current
- MOSFET circuits
- Silicon on insulator technology
- Solid state circuits
- Threshold voltage
ASJC Scopus subject areas
- Bioengineering
- Electrical and Electronic Engineering
- Materials Chemistry
- Condensed Matter Physics