Narrow-width SOI devices the role of quantum mechanical space-quantization effects on device performance

S. S. Ahmed, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate the role of quantum mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement gives rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in the channel region. This, in turn, results not only in a significant increase in the threshold voltage but also in pronounced channel width dependency of the drain current. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum mechanical space-quantization effects have been accounted for via an effective potential scheme that has been quite successful in describing bandgap widening effect and charge set back from the interface.

Original languageEnglish (US)
Title of host publicationProceedings of the 2002 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
PublisherIEEE Computer Society
Pages243-246
Number of pages4
ISBN (Electronic)0780375386
DOIs
StatePublished - 2002
Event2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002 - Washington, United States
Duration: Aug 26 2002Aug 28 2002

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume2002-January
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
Country/TerritoryUnited States
CityWashington
Period8/26/028/28/02

Keywords

  • CMOS process
  • CMOS technology
  • Carrier confinement
  • Degradation
  • Fabrication
  • Leakage current
  • MOSFET circuits
  • Silicon on insulator technology
  • Solid state circuits
  • Threshold voltage

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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