Narrow-width SOI devices the role of quantum mechanical space-quantization effects on device performance

S. S. Ahmed; Dragica Vasileska

doi:10.1109/NANO.2002.1032238

Narrow-width SOI devices the role of quantum mechanical space-quantization effects on device performance

S. S. Ahmed, Dragica Vasileska

IAFSE-ECEE: Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigate the role of quantum mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement gives rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in the channel region. This, in turn, results not only in a significant increase in the threshold voltage but also in pronounced channel width dependency of the drain current. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum mechanical space-quantization effects have been accounted for via an effective potential scheme that has been quite successful in describing bandgap widening effect and charge set back from the interface.

Original language	English (US)
Title of host publication	Proceedings of the IEEE Conference on Nanotechnology
Publisher	IEEE Computer Society
Pages	243-246
Number of pages	4
Volume	2002-January
ISBN (Print)	0780375386
DOIs	https://doi.org/10.1109/NANO.2002.1032238
State	Published - 2002
Event	2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002 - Washington, United States Duration: Aug 26 2002 → Aug 28 2002

Other

Other	2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
Country	United States
City	Washington
Period	8/26/02 → 8/28/02

Keywords

Carrier confinement
CMOS process
CMOS technology
Degradation
Fabrication
Leakage current
MOSFET circuits
Silicon on insulator technology
Solid state circuits
Threshold voltage

ASJC Scopus subject areas

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

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10.1109/NANO.2002.1032238

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Cite this

Ahmed, SS & Vasileska, D 2002, Narrow-width SOI devices the role of quantum mechanical space-quantization effects on device performance. in Proceedings of the IEEE Conference on Nanotechnology. vol. 2002-January, 1032238, IEEE Computer Society, pp. 243-246, 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002, Washington, United States, 8/26/02. https://doi.org/10.1109/NANO.2002.1032238

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abstract = "We investigate the role of quantum mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement gives rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in the channel region. This, in turn, results not only in a significant increase in the threshold voltage but also in pronounced channel width dependency of the drain current. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum mechanical space-quantization effects have been accounted for via an effective potential scheme that has been quite successful in describing bandgap widening effect and charge set back from the interface.",

keywords = "Carrier confinement, CMOS process, CMOS technology, Degradation, Fabrication, Leakage current, MOSFET circuits, Silicon on insulator technology, Solid state circuits, Threshold voltage",

author = "Ahmed, {S. S.} and Dragica Vasileska",

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KW - CMOS process

KW - CMOS technology

KW - Degradation

KW - Fabrication

KW - Leakage current

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KW - Silicon on insulator technology

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