Narrow-width SOI devices the role of quantum mechanical space-quantization effects on device performance

S. S. Ahmed, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate the role of quantum mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement gives rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in the channel region. This, in turn, results not only in a significant increase in the threshold voltage but also in pronounced channel width dependency of the drain current. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum mechanical space-quantization effects have been accounted for via an effective potential scheme that has been quite successful in describing bandgap widening effect and charge set back from the interface.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE Conference on Nanotechnology
PublisherIEEE Computer Society
Pages243-246
Number of pages4
Volume2002-January
ISBN (Print)0780375386
DOIs
StatePublished - 2002
Event2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002 - Washington, United States
Duration: Aug 26 2002Aug 28 2002

Other

Other2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
CountryUnited States
CityWashington
Period8/26/028/28/02

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Keywords

  • Carrier confinement
  • CMOS process
  • CMOS technology
  • Degradation
  • Fabrication
  • Leakage current
  • MOSFET circuits
  • Silicon on insulator technology
  • Solid state circuits
  • Threshold voltage

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Ahmed, S. S., & Vasileska, D. (2002). Narrow-width SOI devices the role of quantum mechanical space-quantization effects on device performance. In Proceedings of the IEEE Conference on Nanotechnology (Vol. 2002-January, pp. 243-246). [1032238] IEEE Computer Society. https://doi.org/10.1109/NANO.2002.1032238