Abstract
The ultimate limits in scaling of conventional MOSFET devices have led the researchers from all over the world to look for novel device concepts, such as ultrathin-body (UTB) silicon-on-insulator (SOI), dual-gate SOI devices, FinFETs, focused ion beam MOSFETs, etc. These novel devices suppress some of the short channel effects exhibited by conventional MOSFETs. However, a lot of the old issues still remain and new issues begin to appear. For example, in UTB SOI devices, dual-gate MOSFETs and in FinFET devices, quantum-mechanical size quantization effects significantly affect the overall device behavior. In addition, unintentional doping leads to considerable fluctuation in key device parameters. In this work we investigate the role of two-dimensional quantization effects in the operation of a narrow-width SOI device using an effective potential scheme in conjunction with a three-dimensional ensemble Monte Carlo particle-based device simulator. We also investigate the influence of unintentional doping on the operation of this device. We find that proper inclusion of quantization effects is needed to explain the experimentally observed width dependence of the threshold voltage. With regard to the problem of unintentional doping, impurities near the middle portion of the source end of the channel have most significant impact on the device drive current and the fluctuations in the device threshold voltage.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 227-236 |
| Number of pages | 10 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 52 |
| Issue number | 2 |
| DOIs | |
| State | Published - Feb 2005 |
Fingerprint
Keywords
- Quantum effects
- Short-range Coulomb interactions
- Silicon-on-insulator (SOI) devices
- Unintentional doping
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
Narrow-width SOI devices : The role of quantum-mechanical size quantization effect and unintentional doping the device operation. / Vasileska, Dragica; Ahmed, Shaikh S.
In: IEEE Transactions on Electron Devices, Vol. 52, No. 2, 02.2005, p. 227-236.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Narrow-width SOI devices
T2 - The role of quantum-mechanical size quantization effect and unintentional doping the device operation
AU - Vasileska, Dragica
AU - Ahmed, Shaikh S.
PY - 2005/2
Y1 - 2005/2
N2 - The ultimate limits in scaling of conventional MOSFET devices have led the researchers from all over the world to look for novel device concepts, such as ultrathin-body (UTB) silicon-on-insulator (SOI), dual-gate SOI devices, FinFETs, focused ion beam MOSFETs, etc. These novel devices suppress some of the short channel effects exhibited by conventional MOSFETs. However, a lot of the old issues still remain and new issues begin to appear. For example, in UTB SOI devices, dual-gate MOSFETs and in FinFET devices, quantum-mechanical size quantization effects significantly affect the overall device behavior. In addition, unintentional doping leads to considerable fluctuation in key device parameters. In this work we investigate the role of two-dimensional quantization effects in the operation of a narrow-width SOI device using an effective potential scheme in conjunction with a three-dimensional ensemble Monte Carlo particle-based device simulator. We also investigate the influence of unintentional doping on the operation of this device. We find that proper inclusion of quantization effects is needed to explain the experimentally observed width dependence of the threshold voltage. With regard to the problem of unintentional doping, impurities near the middle portion of the source end of the channel have most significant impact on the device drive current and the fluctuations in the device threshold voltage.
AB - The ultimate limits in scaling of conventional MOSFET devices have led the researchers from all over the world to look for novel device concepts, such as ultrathin-body (UTB) silicon-on-insulator (SOI), dual-gate SOI devices, FinFETs, focused ion beam MOSFETs, etc. These novel devices suppress some of the short channel effects exhibited by conventional MOSFETs. However, a lot of the old issues still remain and new issues begin to appear. For example, in UTB SOI devices, dual-gate MOSFETs and in FinFET devices, quantum-mechanical size quantization effects significantly affect the overall device behavior. In addition, unintentional doping leads to considerable fluctuation in key device parameters. In this work we investigate the role of two-dimensional quantization effects in the operation of a narrow-width SOI device using an effective potential scheme in conjunction with a three-dimensional ensemble Monte Carlo particle-based device simulator. We also investigate the influence of unintentional doping on the operation of this device. We find that proper inclusion of quantization effects is needed to explain the experimentally observed width dependence of the threshold voltage. With regard to the problem of unintentional doping, impurities near the middle portion of the source end of the channel have most significant impact on the device drive current and the fluctuations in the device threshold voltage.
KW - Quantum effects
KW - Short-range Coulomb interactions
KW - Silicon-on-insulator (SOI) devices
KW - Unintentional doping
UR - http://www.scopus.com/inward/record.url?scp=13344275832&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=13344275832&partnerID=8YFLogxK
U2 - 10.1109/TED.2004.842715
DO - 10.1109/TED.2004.842715
M3 - Article
AN - SCOPUS:13344275832
VL - 52
SP - 227
EP - 236
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 2
ER -