Nanosynthesis of Si-Ge-Sn semiconductors and devices via purpose-built hydride compounds

John Kouvetakis, J. Tolle, R. Roucka, V. R. D'Costa, Y. Y. Fang, Andrew Chizmeshya, Jose Menendez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

We describe new routes to the growth of Ge and Sn-containing semiconductors on Si(100). For modest Sn concentrations GeSn alloys are expected to be direct-gap materials and this property can be exploited to develop band-to-band devices. The ternary GeSiSn system eliminates one of the major limitations of SiGe/Si by decoupling strain and bandgap. This may lead to new families of devices including quantum cascade lasers and high-efficiency solar cells based on hybrid group IV/III-V designs. The latest advances in low-temperature CVD of SiGe/Si, Ge/Si, GeSn/Si, GeSiSn/GeSn/Si and GeSiSn/Ge/Si materials are described and key developments leading to practical device fabrication are emphasized. This includes selective growth via novel epitaxy and practical doping protocols via designer molecular sources to achieve carrier concentrations n, p > 1019 cm-3 for which alloy scattering to the electron and hole mobilities is very small. As an example of a GeSn/GeSiSn prototype device the fabrication of a simple photoconductor at 1.55 μm is presented.

Original languageEnglish (US)
Title of host publicationECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publicationMaterials, Processing, and Devices
Pages807-821
Number of pages15
Edition10
DOIs
StatePublished - Dec 1 2008
Event3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States
Duration: Oct 12 2008Oct 17 2008

Publication series

NameECS Transactions
Number10
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/12/0810/17/08

ASJC Scopus subject areas

  • Engineering(all)

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    Kouvetakis, J., Tolle, J., Roucka, R., D'Costa, V. R., Fang, Y. Y., Chizmeshya, A., & Menendez, J. (2008). Nanosynthesis of Si-Ge-Sn semiconductors and devices via purpose-built hydride compounds. In ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices (10 ed., pp. 807-821). (ECS Transactions; Vol. 16, No. 10). https://doi.org/10.1149/1.2986840