Nanosynthesis of Si-Ge-Sn semiconductors and devices via purpose-built hydride compounds

John Kouvetakis, J. Tolle, R. Roucka, V. R. D'Costa, Y. Y. Fang, Andrew Chizmeshya, Jose Menendez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

We describe new routes to the growth of Ge and Sn-containing semiconductors on Si(100). For modest Sn concentrations GeSn alloys are expected to be direct-gap materials and this property can be exploited to develop band-to-band devices. The ternary GeSiSn system eliminates one of the major limitations of SiGe/Si by decoupling strain and bandgap. This may lead to new families of devices including quantum cascade lasers and high-efficiency solar cells based on hybrid group IV/III-V designs. The latest advances in low-temperature CVD of SiGe/Si, Ge/Si, GeSn/Si, GeSiSn/GeSn/Si and GeSiSn/Ge/Si materials are described and key developments leading to practical device fabrication are emphasized. This includes selective growth via novel epitaxy and practical doping protocols via designer molecular sources to achieve carrier concentrations n, p > 1019 cm-3 for which alloy scattering to the electron and hole mobilities is very small. As an example of a GeSn/GeSiSn prototype device the fabrication of a simple photoconductor at 1.55 μm is presented.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages807-821
Number of pages15
Volume16
Edition10
DOIs
StatePublished - 2008
Event3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States
Duration: Oct 12 2008Oct 17 2008

Other

Other3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/12/0810/17/08

Fingerprint

Hydrides
Semiconductor materials
Photoconducting materials
Fabrication
Quantum cascade lasers
Hole mobility
Electron mobility
Ternary systems
Epitaxial growth
Carrier concentration
Chemical vapor deposition
Solar cells
Energy gap
Doping (additives)
Scattering
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kouvetakis, J., Tolle, J., Roucka, R., D'Costa, V. R., Fang, Y. Y., Chizmeshya, A., & Menendez, J. (2008). Nanosynthesis of Si-Ge-Sn semiconductors and devices via purpose-built hydride compounds. In ECS Transactions (10 ed., Vol. 16, pp. 807-821) https://doi.org/10.1149/1.2986840

Nanosynthesis of Si-Ge-Sn semiconductors and devices via purpose-built hydride compounds. / Kouvetakis, John; Tolle, J.; Roucka, R.; D'Costa, V. R.; Fang, Y. Y.; Chizmeshya, Andrew; Menendez, Jose.

ECS Transactions. Vol. 16 10. ed. 2008. p. 807-821.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kouvetakis, J, Tolle, J, Roucka, R, D'Costa, VR, Fang, YY, Chizmeshya, A & Menendez, J 2008, Nanosynthesis of Si-Ge-Sn semiconductors and devices via purpose-built hydride compounds. in ECS Transactions. 10 edn, vol. 16, pp. 807-821, 3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting, Honolulu, HI, United States, 10/12/08. https://doi.org/10.1149/1.2986840
Kouvetakis J, Tolle J, Roucka R, D'Costa VR, Fang YY, Chizmeshya A et al. Nanosynthesis of Si-Ge-Sn semiconductors and devices via purpose-built hydride compounds. In ECS Transactions. 10 ed. Vol. 16. 2008. p. 807-821 https://doi.org/10.1149/1.2986840
Kouvetakis, John ; Tolle, J. ; Roucka, R. ; D'Costa, V. R. ; Fang, Y. Y. ; Chizmeshya, Andrew ; Menendez, Jose. / Nanosynthesis of Si-Ge-Sn semiconductors and devices via purpose-built hydride compounds. ECS Transactions. Vol. 16 10. ed. 2008. pp. 807-821
@inproceedings{21d0fa9979a64c018c1ac4c4b69f0204,
title = "Nanosynthesis of Si-Ge-Sn semiconductors and devices via purpose-built hydride compounds",
abstract = "We describe new routes to the growth of Ge and Sn-containing semiconductors on Si(100). For modest Sn concentrations GeSn alloys are expected to be direct-gap materials and this property can be exploited to develop band-to-band devices. The ternary GeSiSn system eliminates one of the major limitations of SiGe/Si by decoupling strain and bandgap. This may lead to new families of devices including quantum cascade lasers and high-efficiency solar cells based on hybrid group IV/III-V designs. The latest advances in low-temperature CVD of SiGe/Si, Ge/Si, GeSn/Si, GeSiSn/GeSn/Si and GeSiSn/Ge/Si materials are described and key developments leading to practical device fabrication are emphasized. This includes selective growth via novel epitaxy and practical doping protocols via designer molecular sources to achieve carrier concentrations n, p > 1019 cm-3 for which alloy scattering to the electron and hole mobilities is very small. As an example of a GeSn/GeSiSn prototype device the fabrication of a simple photoconductor at 1.55 μm is presented.",
author = "John Kouvetakis and J. Tolle and R. Roucka and D'Costa, {V. R.} and Fang, {Y. Y.} and Andrew Chizmeshya and Jose Menendez",
year = "2008",
doi = "10.1149/1.2986840",
language = "English (US)",
isbn = "9781566776561",
volume = "16",
pages = "807--821",
booktitle = "ECS Transactions",
edition = "10",

}

TY - GEN

T1 - Nanosynthesis of Si-Ge-Sn semiconductors and devices via purpose-built hydride compounds

AU - Kouvetakis, John

AU - Tolle, J.

AU - Roucka, R.

AU - D'Costa, V. R.

AU - Fang, Y. Y.

AU - Chizmeshya, Andrew

AU - Menendez, Jose

PY - 2008

Y1 - 2008

N2 - We describe new routes to the growth of Ge and Sn-containing semiconductors on Si(100). For modest Sn concentrations GeSn alloys are expected to be direct-gap materials and this property can be exploited to develop band-to-band devices. The ternary GeSiSn system eliminates one of the major limitations of SiGe/Si by decoupling strain and bandgap. This may lead to new families of devices including quantum cascade lasers and high-efficiency solar cells based on hybrid group IV/III-V designs. The latest advances in low-temperature CVD of SiGe/Si, Ge/Si, GeSn/Si, GeSiSn/GeSn/Si and GeSiSn/Ge/Si materials are described and key developments leading to practical device fabrication are emphasized. This includes selective growth via novel epitaxy and practical doping protocols via designer molecular sources to achieve carrier concentrations n, p > 1019 cm-3 for which alloy scattering to the electron and hole mobilities is very small. As an example of a GeSn/GeSiSn prototype device the fabrication of a simple photoconductor at 1.55 μm is presented.

AB - We describe new routes to the growth of Ge and Sn-containing semiconductors on Si(100). For modest Sn concentrations GeSn alloys are expected to be direct-gap materials and this property can be exploited to develop band-to-band devices. The ternary GeSiSn system eliminates one of the major limitations of SiGe/Si by decoupling strain and bandgap. This may lead to new families of devices including quantum cascade lasers and high-efficiency solar cells based on hybrid group IV/III-V designs. The latest advances in low-temperature CVD of SiGe/Si, Ge/Si, GeSn/Si, GeSiSn/GeSn/Si and GeSiSn/Ge/Si materials are described and key developments leading to practical device fabrication are emphasized. This includes selective growth via novel epitaxy and practical doping protocols via designer molecular sources to achieve carrier concentrations n, p > 1019 cm-3 for which alloy scattering to the electron and hole mobilities is very small. As an example of a GeSn/GeSiSn prototype device the fabrication of a simple photoconductor at 1.55 μm is presented.

UR - http://www.scopus.com/inward/record.url?scp=63149129162&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63149129162&partnerID=8YFLogxK

U2 - 10.1149/1.2986840

DO - 10.1149/1.2986840

M3 - Conference contribution

AN - SCOPUS:63149129162

SN - 9781566776561

VL - 16

SP - 807

EP - 821

BT - ECS Transactions

ER -