Abstract

To reduce the cost of III-V solar cells, a buffer-layer free method of depositing high-quality III-V thin films onto low-cost silicon nanostructured substrates is proposed that is enabled by stress relaxation due to the nanopore morphology of the silicon substrate. As a proof-of-concept test of the proposed method, the nanoheteroepitaxial deposition of high quality InP thin film is examined. By comparing the deposition of InP (under conditions optimized for InP deposition onto InP substrates) onto nanostructured Si(100) substrates with nanopore and nanopillar morphologies, the morphology of nanopores is found to be preferred for the nanoheteroepitaxial deposition of InP films.

Original languageEnglish (US)
Pages (from-to)5559-5562
Number of pages4
JournalCrystEngComm
Volume21
Issue number37
DOIs
StatePublished - Jan 1 2019

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Nanopores
Silicon
Buffer layers
buffers
silicon
Substrates
Thin films
stress relaxation
Stress relaxation
thin films
Costs
Solar cells
solar cells
costs

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Nanostructured silicon substrates of nanopore morphology for buffer-layer free nanoheteroepitaxial growth of InP films. / Chin, Alan H.; Gan, Lin; Ning, Cun Zheng.

In: CrystEngComm, Vol. 21, No. 37, 01.01.2019, p. 5559-5562.

Research output: Contribution to journalArticle

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