Abstract
The local electrical characteristics on the surface of MBE-grown Bi2Te3 are probed under ambient conditions by conductive atomic force microscopy. Nanoscale mapping reveals a 10-100× enhancement in current at step-edges compared to that on terraces. Analysis of the local current-voltage characteristics indicates that the transport mechanism is similar for step-edges and terraces. Comparison of the results with those for control samples shows that the current enhancement is not a measurement artifact but instead is due to local differences in electronic properties. The likelihood of various possible mechanisms is discussed. The absence of enhancement at the step-edges for graphite terraces is consistent with the intriguing possibility that spin-orbit coupling and topological effects play a significant role in the step-edge current enhancement in Bi2Te3.
Original language | English (US) |
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Pages (from-to) | 4241-4247 |
Number of pages | 7 |
Journal | Nano Letters |
Volume | 15 |
Issue number | 7 |
DOIs | |
State | Published - Jul 8 2015 |
Keywords
- Bismuth telluride
- atomic force microscopy
- molecular beam epitaxy
- topological insulators
- van der Waals epitaxy
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering