Abstract
Carbon enhanced vapor etching (CEVE) is an alternative approach for fine pattern delineation in silicon dioxide, especially for nanolithographic processes. Exposures by a scanning electron microscope have achieved etch rates of about 16 nm min-1 with etch selectivity ratios of 30 or greater for exposed to unexposed areas. Scanning tunneling microscope resolution studies have shown that trench widths on the order of 3-5 nm are possible. Pattern transfer to silicon has been achieved using reactive ion etching.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 351-355 |
| Number of pages | 5 |
| Journal | Nanotechnology |
| Volume | 7 |
| Issue number | 4 |
| DOIs | |
| State | Published - Dec 1996 |
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ASJC Scopus subject areas
- Engineering (miscellaneous)
- Materials Science(all)
- Physics and Astronomy (miscellaneous)
Cite this
Nanoscale patterning of silicon dioxide thin films by catalyzed HF vapor etching. / Allgair, J.; Ryan, J. M.; Song, H. J.; Kozicki, Michael; Whidden, T. K.; Ferry, D. K.
In: Nanotechnology, Vol. 7, No. 4, 12.1996, p. 351-355.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nanoscale patterning of silicon dioxide thin films by catalyzed HF vapor etching
AU - Allgair, J.
AU - Ryan, J. M.
AU - Song, H. J.
AU - Kozicki, Michael
AU - Whidden, T. K.
AU - Ferry, D. K.
PY - 1996/12
Y1 - 1996/12
N2 - Carbon enhanced vapor etching (CEVE) is an alternative approach for fine pattern delineation in silicon dioxide, especially for nanolithographic processes. Exposures by a scanning electron microscope have achieved etch rates of about 16 nm min-1 with etch selectivity ratios of 30 or greater for exposed to unexposed areas. Scanning tunneling microscope resolution studies have shown that trench widths on the order of 3-5 nm are possible. Pattern transfer to silicon has been achieved using reactive ion etching.
AB - Carbon enhanced vapor etching (CEVE) is an alternative approach for fine pattern delineation in silicon dioxide, especially for nanolithographic processes. Exposures by a scanning electron microscope have achieved etch rates of about 16 nm min-1 with etch selectivity ratios of 30 or greater for exposed to unexposed areas. Scanning tunneling microscope resolution studies have shown that trench widths on the order of 3-5 nm are possible. Pattern transfer to silicon has been achieved using reactive ion etching.
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UR - http://www.scopus.com/inward/citedby.url?scp=0030360006&partnerID=8YFLogxK
U2 - 10.1088/0957-4484/7/4/008
DO - 10.1088/0957-4484/7/4/008
M3 - Article
AN - SCOPUS:0030360006
VL - 7
SP - 351
EP - 355
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 4
ER -