Abstract
Carbon enhanced vapor etching (CEVE) is an alternative approach for fine pattern delineation in silicon dioxide, especially for nanolithographic processes. Exposures by a scanning electron microscope have achieved etch rates of about 16 nm min-1 with etch selectivity ratios of 30 or greater for exposed to unexposed areas. Scanning tunneling microscope resolution studies have shown that trench widths on the order of 3-5 nm are possible. Pattern transfer to silicon has been achieved using reactive ion etching.
Original language | English (US) |
---|---|
Pages (from-to) | 351-355 |
Number of pages | 5 |
Journal | Nanotechnology |
Volume | 7 |
Issue number | 4 |
DOIs | |
State | Published - Dec 1 1996 |
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering