Nanoscale patterning of silicon dioxide thin films by catalyzed HF vapor etching

J. Allgair, J. M. Ryan, H. J. Song, Michael Kozicki, T. K. Whidden, D. K. Ferry

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Carbon enhanced vapor etching (CEVE) is an alternative approach for fine pattern delineation in silicon dioxide, especially for nanolithographic processes. Exposures by a scanning electron microscope have achieved etch rates of about 16 nm min-1 with etch selectivity ratios of 30 or greater for exposed to unexposed areas. Scanning tunneling microscope resolution studies have shown that trench widths on the order of 3-5 nm are possible. Pattern transfer to silicon has been achieved using reactive ion etching.

Original languageEnglish (US)
Pages (from-to)351-355
Number of pages5
JournalNanotechnology
Volume7
Issue number4
DOIs
StatePublished - Dec 1 1996

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ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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