Nanoscale patterning of silicon dioxide thin films by catalyzed HF vapor etching

J. Allgair, J. M. Ryan, H. J. Song, Michael Kozicki, T. K. Whidden, D. K. Ferry

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Carbon enhanced vapor etching (CEVE) is an alternative approach for fine pattern delineation in silicon dioxide, especially for nanolithographic processes. Exposures by a scanning electron microscope have achieved etch rates of about 16 nm min-1 with etch selectivity ratios of 30 or greater for exposed to unexposed areas. Scanning tunneling microscope resolution studies have shown that trench widths on the order of 3-5 nm are possible. Pattern transfer to silicon has been achieved using reactive ion etching.

Original languageEnglish (US)
Pages (from-to)351-355
Number of pages5
JournalNanotechnology
Volume7
Issue number4
DOIs
StatePublished - Dec 1996

Fingerprint

Silicon Dioxide
Etching
Vapors
Silica
etching
vapors
silicon dioxide
Scanning
Thin films
scanning
delineation
Reactive ion etching
Silicon
thin films
Microscopes
Electron microscopes
Carbon
electron microscopes
selectivity
microscopes

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Nanoscale patterning of silicon dioxide thin films by catalyzed HF vapor etching. / Allgair, J.; Ryan, J. M.; Song, H. J.; Kozicki, Michael; Whidden, T. K.; Ferry, D. K.

In: Nanotechnology, Vol. 7, No. 4, 12.1996, p. 351-355.

Research output: Contribution to journalArticle

Allgair, J. ; Ryan, J. M. ; Song, H. J. ; Kozicki, Michael ; Whidden, T. K. ; Ferry, D. K. / Nanoscale patterning of silicon dioxide thin films by catalyzed HF vapor etching. In: Nanotechnology. 1996 ; Vol. 7, No. 4. pp. 351-355.
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